Infineon NPN RF Bipolar Transistor 50 mA, 4 V, 4-Pin TSFP BFP640FH6327XTSA1

Infineon BFP640FH6327XTSA1 is an advanced NPN RF Bipolar Transistor based on silicon germanium technology. It supports a maximum DC collector current of 50 mA and a collector emitter voltage of 4 V. Packaged in a 4-pin TSFP surface mount type, this transistor is optimized for wireless applications requiring high frequency and performance.

The device offers a maximum transition frequency of 42 GHz and a minimum DC current gain of 110, providing excellent linearity and efficiency for low current RF designs. It operates reliably within a wide temperature range from -55°C up to 150°C, making it suitable for various industrial and commercial environments.

This transistor supports a maximum power dissipation of 200 mW, ensuring durability under operational stress. Its maximum collector base voltage is 13 V, and the maximum emitter base voltage is 1.2 V. These electrical characteristics make the BFP640FH6327XTSA1 ideal for energy-efficient designs in CDMA and WLAN applications, supporting robust wireless communication systems.

Constructed with gold metallization for enhanced reliability, it delivers consistent performance critical in modern semiconductor and RF modules. The surface mount package facilitates easy PCB integration for high-density electronics assembly.

This transistor supports a maximum DC collector current of 50 mA. Operates with a maximum collector emitter voltage of 4 V. Features a 4-pin TSFP package suitable for surface mount applications. Has a high maximum transition frequency of 42 GHz for RF performance.

Offers a minimum DC current gain (hFE) of 110 for reliable operation. Designed to operate between temperatures of -55°C to 150°C. NPN transistor configuration with a transistor polarity of NPN. Maximum power dissipation is 200 mW ensuring stable operation under load.

Supports maximum collector base voltage of 13 V and emitter base voltage of 1.2 V. Ideal for CDMA and WLAN wireless communication applications.

This product is commonly used in industrial, telecommunications, and wireless networking equipment, providing essential amplification and switching functions. It is an excellent choice for engineers designing RF circuits requiring high frequency, low noise, and power-efficient transistors.

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