Infineon OptiMOS 2 N-Channel MOSFET, 2.3 A Continuous Drain Current, 20 V Drain Source Voltage, 3-Pin BSS806NH6327XTSA1

Infineon BSS806NH6327XTSA1 OptiMOS 2 N-Channel MOSFET is designed for efficient power management in a variety of electronic applications, offering a maximum continuous drain current of 2.3 A and a maximum drain source voltage of 20 V. Packaged in a compact 3-pin SOT-23 surface mount design, this component allows straightforward integration into compact electronic circuits.

The enhancement mode MOSFET features a low on-state resistance (RDS(on)) of 82 milliohms, significantly reducing power dissipation and improving circuit efficiency. It is ultra logic level compatible, making it suitable for low-voltage (1.8 V) logic signal control. Additionally, it includes an integrated avalanche rating to better withstand electrical stress, enhancing device robustness and reliability.

Certified to meet the automotive standard AEC-Q101, this MOSFET ensures reliable operation in automotive electronics and high-temperature environments, with an operating temperature range spanning from -55°C to +150°C. The device's gate charge is optimized at 1.7 nC typical at Vgs, with a maximum gate-source voltage of ±8 V, enabling effective switch control.

This MOSFET is ideally suited for power management tasks in automotive electronics, low-voltage load driving in automation systems, and switching applications in power supplies. Its surface mount package supports modern compact electronic design requirements.

N-channel topology improves switching efficiency and speed. Enhancement mode operation reduces leakage currents during off states. Compatible with ultra logic level inputs for 1.8 V control signals. High avalanche energy rating for robust operation under transient conditions.

AEC-Q101 qualification ensures suitability for automotive use. Compact SOT-23 surface mount package for space-saving PCB designs. Temperature tolerance from -55°C to 150°C for demanding environments. Low forward voltage of 820 mV typical further reduces power dissipation.

Maximum power dissipation rated at 500 mW supports stable operation.

This Infineon OptiMOS 2 series MOSFET family is known for industry-leading low on-state resistance within its voltage class. The BSS806NH6327XTSA1 model is capable of supporting applications including telecommunications, data communications, solar inverters, low-voltage drives, and server power supply circuits, providing high efficiency and reliability.

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