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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Model | ZTX690B |
| Mount Type | Through Hole |
| Series | ZTX690B |
| Maximum Operating Temperature | 200°C |
| Package Type | E-Line |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 45V |
| Minimum DC Current Gain hFE | 150 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 45V |
| Maximum Power Dissipation Pd | 1W |
| Maximum DC Collector Current Idc | 2A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 150MHz |
DiodesZetex ZTX690B is a general-purpose NPN bipolar transistor designed for various electronic applications requiring moderate power signals. It supports a maximum DC collector current of 2 amperes and a maximum collector-emitter voltage of 45 volts, making it suitable for robust switching and amplification tasks.
Housed in a compact 3-pin E-Line through-hole package, ZTX690B is easily mounted on printed circuit boards for industrial, commercial, and laboratory electronic assemblies. The transistor delivers a minimum DC current gain (hFE) of 150 and operates efficiently at frequencies up to 150 MHz, supporting high-speed electronic circuits.
It can operate reliably in harsh environments with operating temperatures ranging from -55°C to 200°C, expanding its usage in diverse conditions. The device's maximum power dissipation is 1 watt, which ensures effective thermal management in circuit designs.
This ZTX690B transistor is manufactured to high-quality standards in China and comes with no automotive certification, designed mainly for general electronic component applications.
This transistor features a maximum power dissipation of 1 watt. It has a minimum DC current gain (hFE) of 150 ensuring effective signal amplification. Designed for through-hole mounting in electronic circuits. The device operates over a wide temperature range from -55°C to 200°C.
It supports a maximum transition frequency of 150 MHz, suitable for high-frequency applications. Single transistor configuration with NPN polarity. Maximum collector-base voltage is 45 V and emitter-base voltage is 5 V. Package contains three pins adhering to the E-Line standard.
Ideal for electronic engineers and designers working on power amplification, switching circuits, or signal processing in industrial, commercial, and laboratory environments. Explore more Bipolar Transistors and related semiconductor components at EnvMart.
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