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Nexperia N-Channel MOSFET, 10.3 A Drain Current, 30 V Voltage, 3-Pin SOT-23 Surface Mount PMV50XNEAR
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PMV50XNEAR |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Maximum Power Dissipation Pd | 81W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Supports continuous drain current up to 10.3 A for high current applications.
- Rated for maximum drain-source voltage of 30 V ensuring reliability under typical operating conditions.
- Features a small SOT-23 plastic package suitable for surface mounting.
- Offers a low drain-source resistance of 13.6 milliohms for efficient power dissipation.
- Operates in a wide temperature range from -55°C to 175°C for extended temperature performance.
- Maximum gate-source voltage rating of 20 V to protect the device from overvoltage.
- Maximum power dissipation up to 81 W for robust thermal handling.
- Utilizes trench MOSFET technology to provide fast switching and low threshold voltage.
Product Description
Nexperia PMV50XNEAR is an N-Channel enhancement mode MOSFET housed in a compact 3-pin SOT-23 plastic surface mount package. It features trench MOSFET technology with a low threshold voltage and high-speed switching capabilities. The device supports a maximum continuous drain current of 10.3 A and withstands a maximum drain-source voltage of 30 V.
Designed for reliable operation within a wide temperature range from -55°C to 175°C, this MOSFET is suitable for harsh industrial environments. With a low drain-source resistance of 13.6 milliohms and a maximum power dissipation of 81 W, it provides efficient power handling and minimal thermal losses.
PMV50XNEAR is ideal for applications such as DC to DC power converters, fast switching circuits, low-side load switches, and high-speed line drivers. Its surface mount SOT-23 package supports automated PCB assembly, making it suitable for mass production in industrial electronics manufacturing.
Common use cases include power management in industrial electronics, automotive electronics, communication equipment, and other commercial electronic devices requiring efficient discrete semiconductors. The device does not carry specific automotive or industry certifications but is designed to meet standard industrial semiconductor requirements.
Supports continuous drain current up to 10.3 A for high current applications. Rated for maximum drain-source voltage of 30 V ensuring reliability under typical operating conditions. Features a small SOT-23 plastic package suitable for surface mounting.
Offers a low drain-source resistance of 13.6 milliohms for efficient power dissipation. Operates from -55°C to 175°C to withstand extreme temperatures. Maximum gate-source voltage of 20 V to prevent damage from voltage spikes.
Maximum power dissipation of 81 W enhances thermal robustness. Employs trench MOSFET technology for fast switching and high efficiency. Useful in DC to DC converters, switching power supplies, and load switching applications.
Surface mount device compatible with high-volume PCB assembly techniques. Explore a broad selection of semiconductor and MOSFET components at EnvMart for all your industrial and electronic assembly needs.
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Frequently Asked Questions
The PMV50XNEAR supports a maximum continuous drain current of 10.3 A, making it suitable for high current applications.
This model is rated for a maximum drain-source voltage of 30 V, ensuring reliability under typical operating conditions.
It operates within a wide temperature range from -55°C to 175°C, allowing for use in harsh industrial environments.
The PMV50XNEAR is housed in a compact 3-pin SOT-23 plastic surface mount package, suitable for automated PCB assembly.
It has a maximum power dissipation of 81 W, enhancing its thermal robustness during operation.
This MOSFET features a low drain-source resistance of 13.6 milliohms, which contributes to efficient power dissipation.
The maximum gate-source voltage rating for this model is 20 V, which helps protect the device from overvoltage conditions.
It is an N-Channel enhancement mode MOSFET, designed for efficient switching and power management applications.
This model is ideal for applications such as DC to DC power converters, fast switching circuits, and low-side load switches.
The PMV50XNEAR has a pin count of 3, consistent with its SOT-23 package design.
The PMV50XNEAR is manufactured in India, as indicated by its country of origin.
It employs trench MOSFET technology, which provides fast switching capabilities and low threshold voltage.
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