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DiodesZetex N-Channel MOSFET, 600 mA Continuous Drain Current, 60 V Drain Source Voltage, 3-Pin E-Line Package ZVN4206A

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DiodesZetex N-Channel MOSFET, 600 mA Continuous Drain Current, 60 V Drain Source Voltage, 3-Pin E-Line Package ZVN4206A

Name: DiodesZetex N-Channel MOSFET, 600 mA Continuous Drain Current, 60 V Drain Source Voltage, 3-Pin E-Line Package ZVN4206A
Brand: DiodesZetex
SKU: 178542
Price: 0.69 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	4.01mm
Length	4.77mm
Model	ZVN4206A
Width	2.41mm
Mount Type	Through Hole
Maximum Operating Temperature	150°C
Package Type	E-Line
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q100, AEC-Q101, AEC-Q200
Channel Type	N
Maximum Continuous Drain Current Id	600mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	1Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	700mW
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.5V

Key Features

Enhancement mode N-channel MOSFET for efficient switching.
3-pin through-hole mounting in E-Line package.
Maximum drain source resistance of 1 ohm ensures low power loss.
Max power dissipation of 700 mW suitable for low to moderate load applications.
Wide operating temperature range from -55°C to 150°C.
Maximum gate source voltage rating of ±20 V provides robust gate protection.
Compact dimensions with length 4.77 mm, width 2.41 mm, and height 4.01 mm.
Complies with automotive standards AEC-Q100, AEC-Q101, and AEC-Q200.

Product Description

DiodesZetex ZVN4206A is a high-quality N-Channel MOSFET designed for efficient electronic switching applications. Featuring a maximum continuous drain current of 600 mA and a drain-source voltage of up to 60 V, this transistor is optimized for durability and performance in a compact 3-pin E-Line through-hole package.

This MOSFET operates in enhancement mode, providing excellent control in switching circuits. With a low maximum drain source resistance of 1 Ω, it minimizes power loss and heat generation during operation.

Its maximum power dissipation rating of 700 mW makes it suitable for low to moderate power circuits, commonly used in industrial, automotive, and consumer electronics. The device supports a broad temperature range from -55°C to 150°C, ensuring reliable operation under diverse environmental conditions.

The maximum gate-source voltage rating of -20 V to +20 V safeguards the gate terminal against voltage spikes, enhancing device longevity. The compact dimensions (4.77 mm length, 2.41 mm width, 4.01 mm height) make it ideal for space-constrained circuit boards.

This product conforms to rigorous automotive standards AEC-Q100, AEC-Q101, and AEC-Q200, attesting to its quality and reliability in demanding environments. Enhancement mode N-channel MOSFET provides efficient switching.

3-pin E-Line package allows through-hole mounting compatibility. 600 mA continuous drain current supports moderate power loads. Maximum drain source voltage of 60 V. Low Rds(on) of 1 ohm for efficient conduction. Power dissipation up to 700 mW.

Wide operating temperature from -55°C to 150°C. Protected gate with ±20 V maximum gate-source voltage. Meets automotive AEC-Q100, AEC-Q101, and AEC-Q200 standards.

This MOSFET is suitable for applications in industrial control systems, automotive electronics, power management circuits, and other semiconductor device needs. EnvMart offers quality semiconductor components ideal for electronics manufacturing, design, and repair.