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DiodesZetex N-Channel MOSFET 270 mA 60 V Enhancement Mode 3-Pin E-Line ZVN3306A

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 4.01mm
Length 4.77mm
Model ZVN3306A
Width 2.41mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type E-Line
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 270mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 625mW
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.5V

Key Features

  • This device operates in enhancement mode providing reliable switching performance.
  • Maximum power dissipation rating of 625 mW allows for handling moderate power loads.
  • Designed for through-hole mounting for easy installation in electronic circuits.
  • Supports a maximum gate-source voltage of -20 V to +20 V ensuring robust operation.
  • Compact dimensions (4.77 mm length x 4.01 mm height x 2.41 mm width) enable use in space-constrained applications.
  • Operating temperature range from -55°C to 150°C for reliable performance in diverse environments.
  • Pin count is 3, arranged in the E-Line package style.

Product Description

DiodesZetex ZVN3306A is a high-performance N-Channel MOSFET designed for discrete semiconductor applications requiring efficient switching and moderate current handling capabilities. Rated for a maximum continuous drain current of 270 mA and a maximum drain-source voltage of 60 V, this device operates in enhancement mode to provide reliable transistor action in power management and control circuits.

The transistor comes housed in a 3-pin E-Line package with through-hole mounting, facilitating ease of integration into printed circuit boards. Its compact dimensions (4.77 mm length, 4.01 mm height, and 2.41 mm width) make it suitable for applications with limited PCB space. The device can withstand operation temperatures from -55°C up to 150°C, ensuring durability in industrial, automotive, and general electronic environments.

With a maximum power dissipation of 625 mW, the ZVN3306A handles moderate power loads efficiently. It supports a wide gate-source voltage range of -20 V to +20 V, providing design flexibility and protection against overvoltage conditions. Its forward voltage is 1.5 V, typical for MOSFET switching components.

The device also complies with automotive standards AEC-Q100, AEC-Q200, and AEC-Q101, making it suitable for use in automotive electronic systems requiring stringent quality and reliability metrics.

This N-Channel MOSFET supports continuous drain current up to 270 mA. Maximum drain-source voltage rating of 60 V allows use in medium voltage applications. Compact 3-pin E-Line package enables secure mounting and integration.

Wide operating temperature range from -55°C to 150°C. Maximum power dissipation of 625 mW ensures effective thermal management. Operates in enhancement mode for efficient switching. Gate-source voltage tolerance up to ±20 V provides robust operation.

Meets automotive industry standards AEC-Q100, AEC-Q200, and AEC-Q101.

This MOSFET is ideal for use in electronics manufacturing, automotive controls, industrial power management, and other semiconductor applications requiring reliable switching components. Browse our Electronics & Electricals categories for other semiconductor components and related devices at EnvMart.

DiodesZetex N-Channel MOSFET 270 mA 60 V Enhancement Mode 3-Pin E-Line ZVN3306A
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Frequently Asked Questions

The maximum continuous drain current for this model is 270 mA.

It has a maximum drain-source voltage rating of 60 V, making it suitable for medium voltage applications.

The maximum power dissipation rating is 625 mW, allowing it to handle moderate power loads efficiently.

This model operates within a temperature range of -55°C to 150°C, ensuring reliable performance in various environments.

It comes in a 3-pin E-Line package, designed for through-hole mounting, facilitating easy installation.

The device supports a maximum gate-source voltage of -20 V to +20 V, providing design flexibility and protection against overvoltage.

The dimensions are 4.77 mm in length, 4.01 mm in height, and 2.41 mm in width, making it compact for space-constrained applications.

It complies with automotive standards AEC-Q100, AEC-Q200, and AEC-Q101, ensuring quality and reliability for automotive applications.

The forward voltage for this model is 1.5 V, which is typical for MOSFET switching components.

It is an N-channel MOSFET, designed for enhancement mode operation to provide reliable switching performance.

The maximum drain-source resistance is 5 Ω, which contributes to its efficient operation in switching applications.

This model is suitable for electronics manufacturing, automotive controls, and industrial power management applications requiring reliable switching components.

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