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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 4.01mm |
| Length | 4.77mm |
| Model | ZVN3306A |
| Width | 2.41mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | E-Line |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 270mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 625mW |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
DiodesZetex ZVN3306A is a high-performance N-Channel MOSFET designed for discrete semiconductor applications requiring efficient switching and moderate current handling capabilities. Rated for a maximum continuous drain current of 270 mA and a maximum drain-source voltage of 60 V, this device operates in enhancement mode to provide reliable transistor action in power management and control circuits.
The transistor comes housed in a 3-pin E-Line package with through-hole mounting, facilitating ease of integration into printed circuit boards. Its compact dimensions (4.77 mm length, 4.01 mm height, and 2.41 mm width) make it suitable for applications with limited PCB space. The device can withstand operation temperatures from -55°C up to 150°C, ensuring durability in industrial, automotive, and general electronic environments.
With a maximum power dissipation of 625 mW, the ZVN3306A handles moderate power loads efficiently. It supports a wide gate-source voltage range of -20 V to +20 V, providing design flexibility and protection against overvoltage conditions. Its forward voltage is 1.5 V, typical for MOSFET switching components.
The device also complies with automotive standards AEC-Q100, AEC-Q200, and AEC-Q101, making it suitable for use in automotive electronic systems requiring stringent quality and reliability metrics.
This N-Channel MOSFET supports continuous drain current up to 270 mA. Maximum drain-source voltage rating of 60 V allows use in medium voltage applications. Compact 3-pin E-Line package enables secure mounting and integration.
Wide operating temperature range from -55°C to 150°C. Maximum power dissipation of 625 mW ensures effective thermal management. Operates in enhancement mode for efficient switching. Gate-source voltage tolerance up to ±20 V provides robust operation.
Meets automotive industry standards AEC-Q100, AEC-Q200, and AEC-Q101.
This MOSFET is ideal for use in electronics manufacturing, automotive controls, industrial power management, and other semiconductor applications requiring reliable switching components. Browse our Electronics & Electricals categories for other semiconductor components and related devices at EnvMart.
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