Infineon BSZ N-Channel MOSFET 212A Continuous Drain Current 60V Drain Source Voltage Surface Mount BSZ040N06LS5ATMA1

Infineon BSZ040N06LS5ATMA1 N-Channel MOSFET is a high-current transistor designed for advanced surface-mount power conversion and switching applications in industrial, electronic, and automotive fields. It supports a maximum continuous drain current of 212 amperes and can operate at a drain-to-source voltage of up to 60 volts, all housed within a compact SuperSO8 5 x 6 package with surface mount capabilities.

The device's low on-resistance of 0.7 milliohms significantly reduces conduction losses, enhancing efficiency in high-current operational modes. It can dissipate up to 81 watts of power, allowing for effective thermal management in high-demand duty cycles. The MOSFET operates reliably across a wide ambient temperature range from -55°C to +150°C, ensuring stability in various industrial and commercial environments.

The maximum gate-to-source voltage rating of 20 volts protects the transistor from voltage spikes at the input gate. A typical gate charge value of 80 nanocoulombs facilitates smooth and predictable switching performance, making the device suitable for synchronous power supplies and motor-drive applications. The forward voltage drop of 1.2 volts contributes to enhanced efficiency in synchronous circuits.

This device complies with RoHS standards, ensuring reduced environmental impact and compatibility with global regulatory requirements.

Typical usage scenarios for the BSZ040N06LS5ATMA1 MOSFET include high-current power conversion modules, DC-DC synchronous buck converters, motor-drive stages requiring substantial drain currents, server power distribution units, and general-purpose surface-mount switching within power supplies.

The SuperSO8 package consists of 8 pins in a compact 5 by 6 mm footprint, enabling efficient circuit board space utilization. The MOSFET is designed for high-current power conversion and switching applications. It features a low 0.7mΩ drain-source resistance for reduced conduction losses.

Maximum power dissipation of 81W supports effective thermal management. The device tolerates operating temperatures from -55°C to +150°C. A maximum gate-to-source voltage of 20V protects against excessive gate stress. Typical gate charge is 80nC, enabling predictable and efficient switching behavior.

Forward voltage of 1.2V enhances synchronous circuit efficiency. Compliant with RoHS environmental standards. Applications include DC-DC synchronous buck converters, motor-drive stages, server power distribution units, and general surface-mount switching.

Supplied in an 8-pin package optimized for compact high-current designs. Explore more Infineon power MOSFETs and semiconductor solutions for your electronic and industrial projects here at EnvMart.