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Vishay N-Channel Depletion MOSFET, 90.5 A, 100 V, PowerPAK SO-8DC, Surface Mount, 8-Pin SIDR104AEP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.15mm |
| Model | SIDR104AEP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK SO-8DC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 90.5A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 0.0021Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 120W |
| Typical Gate Charge Qg @ Vgs | 46.1nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Designed for high power applications with low resistance.
- Supports a maximum continuous drain current of 90.5 amperes.
- Operates at a maximum drain-source voltage of 100 volts.
- Compact PowerPAK SO-8DC surface-mount package with 8 pins.
- Built for reliable operation up to 125°C maximum temperature.
- Low gate charge of 46.1 nC ensures efficient switching.
- Forward voltage drop of 1.2 V reduces power loss.
- Compliant with automotive standard AEC-Q101 for enhanced reliability.
Product Description
Vishay SIDR104AEP-T1-RE3 is a Gen IV power N-Channel depletion mode MOSFET designed for demanding electronic applications requiring efficient power management. It features a maximum continuous drain current of 90.5 A and a maximum drain-source voltage of 100 V, making it ideal for high-performance power supplies and motor drive controls.
This MOSFET is housed in a compact PowerPAK SO-8DC surface-mount package with 8 pins, enabling efficient PCB layout and heat dissipation. Its typical gate charge of 46.1 nC ensures fast switching capability with reduced energy loss, while the maximum power dissipation rating of 120 W supports high power operation.
Engineered to operate over a temperature range from -55°C up to 125°C, the SIDR104AEP-T1-RE3 maintains reliable performance in harsh environments. The device's low on-resistance of 0.0021 Ω minimizes conduction losses, improving overall system efficiency. Its forward voltage of 1.2 V further contributes to reduced power dissipation in switching circuits.
The component meets the automotive industry AEC-Q101 qualification standard, underscoring its suitability for use in advanced automotive electronic systems demanding high reliability and robustness.
Designed for high power efficiency with low resistance. Maximum continuous drain current of 90.5 A for heavy load applications. 100 V maximum drain-source voltage for robust voltage handling. Low gate charge for fast switching and energy savings.
Wide operating temperature from -55°C to 125°C. Compact surface mount PowerPAK SO-8DC package with 8 pins. Automotive AEC-Q101 standard compliant ensuring high reliability. Ideal for power supply, motor control, and synchronous rectification use cases.
This Vishay N-Channel MOSFET is widely used in industrial, automotive, and power management electronics, delivering reliability and performance required for intensive electronic control and power conversion applications. Explore more power semiconductor solutions in the EnvMart catalog to complement your design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 90.5 A, making it suitable for heavy load applications.
It can operate at a maximum drain-source voltage of 100 V, providing robust voltage handling capabilities.
The typical gate charge is 46.1 nC, which ensures efficient switching and reduced energy loss.
It is housed in a compact PowerPAK SO-8DC surface-mount package with 8 pins, facilitating efficient PCB layout.
The forward voltage drop is 1.2 V, which helps reduce power loss in switching applications.
It complies with the automotive standard AEC-Q101, ensuring high reliability for automotive applications.
The maximum power dissipation rating is 120 W, supporting high power operation.
The maximum drain-source resistance is 0.0021 Ω, which minimizes conduction losses and improves system efficiency.
This package has a pin count of 8, which is typical for compact surface-mount devices.
It features an N-channel configuration, specifically designed for depletion mode operation.
The dimensions of this unit are 6.15 mm in length and 5.15 mm in width.
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