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Vishay N-Channel Depletion MOSFET, 90.5 A, 100 V, PowerPAK SO-8DC, Surface Mount, 8-Pin SIDR104AEP-T1-RE3

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Vishay N-Channel Depletion MOSFET, 90.5 A, 100 V, PowerPAK SO-8DC, Surface Mount, 8-Pin SIDR104AEP-T1-RE3

Name: Vishay N-Channel Depletion MOSFET, 90.5 A, 100 V, PowerPAK SO-8DC, Surface Mount, 8-Pin SIDR104AEP-T1-RE3
Brand: Vishay
SKU: 176956
Price: 20.22 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Length	6.15mm
Model	SIDR104AEP-T1-RE3
Width	5.15mm
Mount Type	Surface
Maximum Operating Temperature	125°C
Package Type	PowerPAK SO-8DC
Minimum Operating Temperature	-55°C
Pin Count	8
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	90.5A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	0.0021Ω
Channel Mode	Depletion
Maximum Power Dissipation Pd	120W
Typical Gate Charge Qg @ Vgs	46.1nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V

Key Features

Designed for high power applications with low resistance.
Supports a maximum continuous drain current of 90.5 amperes.
Operates at a maximum drain-source voltage of 100 volts.
Compact PowerPAK SO-8DC surface-mount package with 8 pins.
Built for reliable operation up to 125°C maximum temperature.
Low gate charge of 46.1 nC ensures efficient switching.
Forward voltage drop of 1.2 V reduces power loss.
Compliant with automotive standard AEC-Q101 for enhanced reliability.

Product Description

Vishay SIDR104AEP-T1-RE3 is a Gen IV power N-Channel depletion mode MOSFET designed for demanding electronic applications requiring efficient power management. It features a maximum continuous drain current of 90.5 A and a maximum drain-source voltage of 100 V, making it ideal for high-performance power supplies and motor drive controls.

This MOSFET is housed in a compact PowerPAK SO-8DC surface-mount package with 8 pins, enabling efficient PCB layout and heat dissipation. Its typical gate charge of 46.1 nC ensures fast switching capability with reduced energy loss, while the maximum power dissipation rating of 120 W supports high power operation.

Engineered to operate over a temperature range from -55°C up to 125°C, the SIDR104AEP-T1-RE3 maintains reliable performance in harsh environments. The device's low on-resistance of 0.0021 Ω minimizes conduction losses, improving overall system efficiency. Its forward voltage of 1.2 V further contributes to reduced power dissipation in switching circuits.

The component meets the automotive industry AEC-Q101 qualification standard, underscoring its suitability for use in advanced automotive electronic systems demanding high reliability and robustness.

Designed for high power efficiency with low resistance. Maximum continuous drain current of 90.5 A for heavy load applications. 100 V maximum drain-source voltage for robust voltage handling. Low gate charge for fast switching and energy savings.

Wide operating temperature from -55°C to 125°C. Compact surface mount PowerPAK SO-8DC package with 8 pins. Automotive AEC-Q101 standard compliant ensuring high reliability. Ideal for power supply, motor control, and synchronous rectification use cases.

This Vishay N-Channel MOSFET is widely used in industrial, automotive, and power management electronics, delivering reliability and performance required for intensive electronic control and power conversion applications. Explore more power semiconductor solutions in the EnvMart catalog to complement your design needs.