Vishay E N-Channel Power MOSFET, 48 A Continuous Drain Current, 650 V Maximum Drain Source Voltage, 278W SIHK045N60E-T1-GE3

Vishay SIHK045N60E-T1-GE3 is a high-voltage E N-Channel Power MOSFET designed for demanding applications requiring robust power switching and conversion capabilities. It supports a maximum continuous drain current of 48A and a maximum drain source voltage of 650V, enabling efficient handling of heavy electrical loads.

The device features a low on-resistance of just 0.043Ω, helping to reduce conduction losses and improve overall efficiency in power management systems. With a maximum power dissipation rating of 278W, it provides strong thermal endurance, making it suitable for harsh industrial environments and high-power circuits.

Typical gate charge is 98nC at Vgs, which allows for predictable and efficient switching performance. The gate voltage tolerance reaches up to 30V, allowing safe operation within robust drive margins and protecting the device from overstress during switching events.

Operating temperature ranges from a minimum of -55°C to a maximum of +150°C, enabling use in extreme ambient conditions encountered in automotive and industrial applications. The MOSFET complies with RoHS regulations, supporting eco-friendly manufacturing processes, and meets AEC-Q101 automotive qualification standards, making it ideal for vehicle electronics and motor drive circuits.

Packaged in a surface-mount PowerPAK 10 x 12 low-profile design, it facilitates efficient heat dissipation and supports automated PCB assembly techniques, improving production throughput and reliability.

Applications include offline power supplies requiring high blocking voltage, automotive power management, motor drives, DC-DC converters in industrial equipment, inverter stages in renewable-energy systems, and compact power modules for space-constrained designs.

Designed for high-voltage switching with 650V rating and 48A continuous drain current. Low on-resistance of 0.043Ω reduces conduction losses effectively. High maximum power dissipation of 278W enhances thermal endurance.

Typical gate charge of 98nC enables predictable switching behaviour. Gate tolerance up to 30V ensures robust drive margin and reliability. Wide operating temperature range from -55°C to +150°C suited for harsh environments.

Compliance with RoHS directives supports lead-free manufacturing standards. Meets AEC-Q101 automotive standards for vehicle electronic applications. Surface-mount PowerPAK 10 x 12 package optimized for heat dissipation and assembly automation.

Explore the comprehensive range of Vishay Power MOSFETs and related semiconductor products at EnvMart for industrial, automotive, and advanced electronic applications.