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Vishay EF N-Channel Power MOSFET 26A 650V 4-Pin PowerPAK 8x8 SiHH105N60EF-T1GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SiHH105N60EF-T1GE3 |
| Mount Type | Surface |
| Series | EF |
| Maximum Operating Temperature | +150°C |
| Package Type | PowerPAK 8 x 8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 26A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 0.091Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 174W |
| Typical Gate Charge Qg @ Vgs | 33nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Designed for surface mounting with a compact PowerPAK 8 x 8 package.
- High-voltage switching transistor suitable for industrial and automotive applications.
- Supports extended temperature range from -55°C to +150°C for demanding environments.
- Low on-resistance (0.091 ohm) reduces conduction losses efficiently.
- Typical gate charge of 33nC provides predictable drive requirements.
- Meets automotive standard AEC-Q101 for vehicle-grade electronic designs.
- Maximum power dissipation of 174W allows reliable sustained thermal loading.
- Gate-source voltage rating of 30V ensures compatibility with common gate-drive schemes.
Product Description
Vishay SiHH105N60EF-T1GE3 EF N-Channel Power MOSFET features a maximum continuous drain current of 26 amperes and a maximum drain-source voltage of 650 volts. Packaged in a compact 4-pin PowerPAK 8 x 8 surface mount format, it is designed for robust high-voltage switching applications in industrial and automotive environments.
This depletion mode MOSFET offers a low maximum drain-source resistance of 0.091 ohms, significantly reducing conduction losses and enhancing efficiency. The device supports a wide operating temperature range from -55°C to +150°C, enabling reliable performance under extreme ambient and junction temperature conditions when properly cooled.
With a typical gate charge of 33 nanocoulombs at gate-source voltage, the MOSFET provides predictable and efficient gate drive characteristics. It can withstand a maximum gate-source voltage of 30 volts, compatible with common gate drive schemes. The maximum power dissipation rating of 174 watts allows the device to handle significant thermal loads during operation.
The SiHH105N60EF-T1GE3 is certified to comply with the RoHS directive and meets the AEC-Q101 automotive qualification standard, making it suitable for vehicle-grade electronic designs. Typical applications include high-voltage DC-DC converters in industrial power supplies, automotive power modules, primary-side switching in switched-mode power supplies (SMPS), inverter circuits, and motor drive half-bridge stages in electrified systems.
The surface-mount PowerPAK 8 x 8 package facilitates dense printed circuit board layouts and efficient thermal coupling to PCB copper pours, supporting ruggedized electronic assemblies that demand compactness and thermal performance.
Industries such as industrial manufacturing, automotive electronics, power conversion, and renewable energy can benefit from the efficient switching and high voltage capabilities of this MOSFET.
Designed for compact surface mounting with PowerPAK 8x8 package. Operates safely in temperatures ranging from -55°C to +150°C. Low conduction losses due to 0.091Ω on-resistance. Predictable gate driving with 33nC typical gate charge.
Automotive-grade quality with AEC-Q101 certification. Suitable for industrial DC-DC converters and motor drives. Meets RoHS environmental compliance standards. Discover more industrial semiconductors and Power MOSFETs at EnvMart, your trusted source for advanced electronic components.
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Frequently Asked Questions
The maximum continuous drain current for the Vishay SiHH105N60EF-T1GE3 is 26 amperes.
This model has a maximum drain-source voltage rating of 650 volts.
The maximum drain-source resistance is 0.091 ohms, which helps reduce conduction losses.
It operates safely within a temperature range of -55°C to +150°C.
The typical gate charge at gate-source voltage is 33 nanocoulombs.
The maximum gate-source voltage rating is 30 volts, ensuring compatibility with common gate drive schemes.
It has a maximum power dissipation rating of 174 watts, allowing it to handle significant thermal loads.
The Vishay SiHH105N60EF-T1GE3 is packaged in a compact PowerPAK 8 x 8 surface mount format.
This model meets the AEC-Q101 automotive qualification standard for vehicle-grade electronic designs.
Yes, the Vishay SiHH105N60EF-T1GE3 complies with the RoHS directive.
It is suitable for applications such as high-voltage DC-DC converters, automotive power modules, and motor drive half-bridge stages.
This device features a 4-pin configuration.
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