Vishay EF N-Channel Power MOSFET, 95 A Continuous Drain Current, 650 V Drain-Source Voltage, Depletion SIHG026N60EF-GE3

Vishay SIHG026N60EF-GE3 is a high-performance EF series N-Channel Power MOSFET engineered for demanding power conversion and switching tasks in industrial, automotive, and commercial applications. This device supports a continuous drain current of 95A and a drain-source voltage of 650V, making it suitable for high power and high voltage environments.

Its depletion mode channel design with a low on-resistance of 0.023Ω efficiently reduces conduction losses, enhancing overall system energy efficiency. The device boasts a maximum power dissipation of 521W, allowing sustained operation under heavy load.

Operating reliably over a broad temperature range from -55°C to +150°C, it is designed for harsh thermal conditions encountered in automotive powertrains, industrial motor drives, inverters, and telecommunications power modules. The TO-247AC surface mount package provides excellent thermal conductivity and ease of integration with heatsinks and PCBs.

The typical gate charge of 63nC supports predictable switching dynamics, with a maximum gate-source voltage rating of 30V accommodating varied gate drivers. Compliance with RoHS restrictions and the automotive AEC-Q101 standard ensures quality and environmental safety, affirming suitability for automotive electronic systems.

Applications include high-voltage power supplies, battery management, EV charging stations, industrial automation, and server power modules. This MOSFET is ideal for engineers seeking robust, reliable semiconductor components for advanced power electronics solutions.

Capable of continuous drain current up to 95 amperes for heavy load scenarios. Operates with a maximum drain-source voltage of 650 volts for high-voltage switching. Features a low on-resistance of 0.023 ohms to minimize conduction losses.

Power dissipation rating of 521 watts enables sustained power delivery. Supports operating temperatures ranging from -55°C to +150°C for extreme thermal environments. Typical gate charge of 63 nanocoulombs allows predictable switching behavior.

Gate-source voltage rating up to 30 volts for flexible gate drive designs. Complies with RoHS and automotive AEC-Q101 standards for environmental and quality assurance. Surface mountable TO-247AC package with 3 pins ensures robust thermal management with heatsinks.

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