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onsemi SUPERFET III N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220 Package NTPF165N65S3H
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 29.95mm |
| Length | 10.63mm |
| Model | NTPF165N65S3H |
| Width | 4.9mm |
| Mount Type | Through Hole |
| Series | SUPERFET III |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 19A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 165mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 33W |
| Typical Gate Charge Qg @ Vgs | 35nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Designed with SUPERFET III technology for low on-resistance and reduced gate charge.
- Comes in a 3-pin TO-220 package optimized for through-hole mounting.
- Maximum power dissipation of 33 watts ensures efficient performance under load.
- Wide operating temperature range from -55°C to 175°C for versatile industrial applications.
- Maximum gate-source voltage of 30 volts for reliable switching action.
- Forward voltage is rated at 1.2 volts supporting efficient conduction.
- Compact dimensions with length 10.63 mm, width 4.9 mm, and height 29.95 mm.
- This device is RoHS compliant and lead-free, suitable for environmentally conscious manufacturing.
Product Description
onsemi NTPF165N65S3H SUPERFET III N-Channel MOSFET is engineered for high voltage and current power switching, supporting 19 A maximum continuous drain current and 650 V maximum drain-source voltage. Featuring advanced charge balance technology, this MOSFET achieves outstanding low on-resistance and minimal gate charge, minimizing conduction losses and improving switching efficiency.
Housed in a 3-pin TO-220 package with through-hole mount, it provides easy integration into power electronics assemblies. The device maintains performance over a broad temperature range from -55°C to 175°C, making it suitable for industrial, automotive, and commercial power management applications.
Compact dimensions (10.63 mm length, 4.9 mm width, and 29.95 mm height) optimize board space. Electrical characteristics include a maximum gate-source voltage of 30 V, forward voltage of 1.2 V, and maximum power dissipation of 33 W, ensuring robust operation.
This MOSFET is 100% avalanche tested, Pb-free, and RoHS compliant, supporting regulatory and environmental standards. Utilizes SUPERFET III technology for enhanced switching and low conduction losses. Suitable for high voltage and high current power control circuits.
Ideal for industrial motor drives, power supplies, and automotive electronics. Reliable operation across a wide temperature and voltage range. Compact and durable TO-220 package facilitates easy mounting and heat dissipation.
Meets environmental directives with RoHS compliance and lead-free status. Designed for high reliability with avalanche testing for surge conditions. Explore the complete range of MOSFETs at EnvMart for industrial and electronic applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 19 A.
This MOSFET has a maximum drain-source voltage rating of 650 V.
It can handle a maximum power dissipation of 33 W.
This model comes in a 3-pin TO-220 package optimized for through-hole mounting.
The operating temperature range is from -55°C to 175°C.
The maximum gate-source voltage for this unit is 30 V.
The dimensions are 10.63 mm in length, 4.9 mm in width, and 29.95 mm in height.
The forward voltage is rated at 1.2 V.
It is designed with SUPERFET III technology for low on-resistance and reduced gate charge.
Yes, this device is RoHS compliant and lead-free, suitable for environmentally conscious manufacturing.
This MOSFET is suitable for industrial motor drives, power supplies, and automotive electronics.
The typical gate charge at Vgs is 35 nC.
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