onsemi SUPERFET III N-Channel MOSFET, 10 A, 650 V, 3-Pin TO-220, Through Hole Mount FCPF360N65S3R0L-F154

onsemi FCPF360N65S3R0L-F154 is a high-performance N-Channel MOSFET from the SUPERFET III series, designed for advanced power switching applications. Featuring a continuous drain current capability of 10 A and a high drain-source voltage rating of 650 V, this MOSFET is suitable for industrial, automotive, and power management electronic circuits requiring reliable, efficient switching.

The device is housed in a robust TO-220 package with three pins, supporting through hole mounting which allows secure and stable installation in printed circuit boards. Its construction leverages charge balance technology to achieve low on-resistance and reduced gate charge, delivering superior conduction and switching efficiency while minimizing losses.

The MOSFET operates reliably in temperature ranges from -55°C to a maximum of 150°C, making it adaptable for harsh environments. A typical gate charge of 18 nC ensures minimal gate drive losses, and the device can withstand gate-source voltages up to 30 V, protecting it from voltage spikes during operation.

Additional features include a maximum drain-source resistance of 360 mΩ and a forward voltage drop of 1.2 V, emphasizing low conduction losses and enhanced device efficiency. The compact size (16.2 mm length, 10.4 mm width, 4.8 mm height) aids in compact power designs.

This MOSFET features a maximum continuous drain current of 10 A for high current applications. Maximum drain-source voltage rating is 650 V, suitable for high voltage circuits. It comes in a TO-220 package with three pins and supports through hole mounting.

Maximum drain-source resistance of 360 mΩ ensures efficient conduction. Designed with SUPERFET III series technology to minimize conduction losses and optimize switching performance. Operating temperature range from -55°C up to a maximum of 150°C for reliability under various conditions.

Typical gate charge of 18 nC at Vgs contributes to low gate drive power. Maximum gate-source voltage rating of 30 V protects against voltage spikes. Forward voltage of 1.2 V ensures low voltage drop during conduction. Compact dimensions with length 16.2 mm, width 10.4 mm, and height 4.8 mm enable space-efficient designs.

This MOSFET is ideal for industrial power electronics, automotive control systems, high-efficiency power supplies, and other electronic applications requiring durable and efficient switching components.

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