Infineon CoolMOS N-Channel MOSFET 1.5 A 800 V Enhancement 3-Pin TO-251 IPU80R4K5P7AKMA1

Infineon IPU80R4K5P7AKMA1 is a high-performance CoolMOS N-Channel MOSFET designed for efficient power switching applications. It features a maximum continuous drain current of 1.5 A and an 800 V maximum drain-source voltage, making it suitable for demanding electronic circuits requiring high voltage endurance and reliable conduction.

The device uses advanced CoolMOS super junction technology developed by Infineon, which delivers superior thermal resistance and efficiency, reducing overall heat generation during operation. Pb-free lead plating and halogen-free construction align with modern environmental standards such as IEC61249-2-23.

Fast switching performance is enabled by its low typical gate charge of 4 nC and maximum gate-source voltage of 20 V, ensuring minimal switching losses and improved system efficiency. The MOSFET is designed with surface mount package TO-251, with compact physical dimensions of 6.73 mm length, 6.22 mm width, and 2.41 mm height, ideal for space-constrained electronic assemblies.

This product is rated to operate within a temperature range from -55°C to 150°C, suitable for a wide range of industrial, commercial, and consumer electronic applications. It has been 100% avalanche tested for ruggedness and dependability under transient surge conditions.

Typical applications include power supplies, motor drives, inverters, and other power electronics circuits demanding efficient, reliable switching components. Infineon's expertise in super junction MOSFET technology provides designers with a trusted solution featuring low conduction and switching losses.

Supports maximum continuous drain current of 1.5 A. Maximum drain-source voltage rating of 800 V. High power dissipation capability of 13 W. CoolMOS series ensures enhanced thermal efficiency. Low forward voltage at 900 mV minimizes conduction losses.

Wide operating temperature range from -55°C to 150°C. Low gate charge of 4 nC enables fast switching. Lead-free and halogen-free compliant construction. Compact TO-251 package suitable for surface mount. 100% avalanche tested for reliability under surge conditions.

This Infineon MOSFET is a suitable component for industrial, laboratory, and power management applications requiring efficiency and robustness. Browse more high-quality semiconductors and MOSFETs on EnvMart for your electronics projects and manufacturing needs.