onsemi N-Channel MOSFET 30 A 650 V Enhancement 3-Pin TO-247 NTHL095N65S3H

onsemi NTHL095N65S3H is a high-voltage N-Channel MOSFET designed for power electronics and semiconductor applications, rated at 30 A maximum continuous drain current and 650 V maximum drain-source voltage. It uses enhancement channel mode technology with ultra-low gate charge to optimize switching efficiency and minimize conduction losses.

This MOSFET features a robust TO-247 through-hole package with 3 pins, ideal for industrial power supplies, motor control, and energy management systems. The device withstands operating temperatures from -55°C up to 175°C, supporting high reliability in harsh conditions.

Designed with a low on-resistance of 95 mΩ, typical forward voltage of 1.2 V, and maximum power dissipation of 208 W, this component is suitable for demanding applications requiring efficient power switching and low thermal dissipation.

The compact physical size of 15.87 mm length, 4.8 mm width, and 41.34 mm height facilitates integration into electronics assemblies with constrained space. Supports a maximum continuous drain current of 30 A. Maximum drain-source voltage rated at 650 V.

Ultra-low gate charge of 58 nC enhances switching performance. Maximum power dissipation up to 208 W. Wide operating temperature range from -55°C to 175°C. Enhancement mode N-channel MOSFET with low Rds(on) of 95 mΩ. TO-247 package type with through hole mounting and 3 pins.

Typical forward voltage of 1.2 V. Compact device dimensions: 15.87 mm x 4.8 mm x 41.34 mm. Ideal for industrial, power management, and electronic component applications. Suitable for use in industrial, laboratory, electronic manufacturing, power management systems, and other environments demanding reliable semiconductor switching components.

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