Infineon CoolMOS CSFD N-Channel MOSFET, 236 A, 650 V Enhancement, 3-Pin TO-247 IPW60R037CSFDXKSA1

Infineon IPW60R037CSFDXKSA1 CoolMOS CSFD N-Channel MOSFET is an advanced power semiconductor optimized for high-efficiency switching and robustness in demanding applications such as off-board electric vehicle (EV) charging stations. With a maximum continuous drain current of 236 A and a drain-source voltage rating of 650 V, this device supports high power density solutions requiring reliable operation over a wide temperature range from -55°C to 150°C.

This MOSFET employs CoolMOS superjunction technology, providing ultra-fast integrated body diode characteristics and a best-in-class reverse recovery charge (Qrr). The enhancement channel mode and low on-resistance of 37 milliohms minimize conduction losses and improve energy efficiency during high-speed switching.

The device's typical gate charge of 136 nC at Vgs makes it suitable for applications demanding swift switching and controlled gate drive, while the maximum gate-source voltage of 20 V offers ample operational margin. The forward voltage of 1 V ensures low forward conduction losses, aiding overall power efficiency.

Mechanically, IPW60R037CSFDXKSA1 comes in a 3-pin TO-247 package with compact dimensions measuring 16.13 mm in length, 21.1 mm in width, and 5.21 mm in height, facilitating easy integration into surface mount designs. The robust package ensures effective heat dissipation with a maximum power dissipation rating of 245 W.

This MOSFET is especially designed for industrial and commercial power electronics, laboratory power supply modules, automotive electronic systems, manufacturing equipment, and advanced EV charging infrastructure, where performance and reliability are critical. The integrated fast body diode and rugged construction guarantee superior resilience to switching transients and improved device lifetime.

Designed with CoolMOS CSFD superjunction technology for high efficiency. Ultra-fast integrated body diode with low reverse recovery charge. High continuous drain current rating of 236 A for power-intensive applications. Wide operating temperature range from -55°C to 150°C for diverse environments.

Low gate charge improving switching performance and energy efficiency. Enhancement mode N-channel MOSFET with low drain-source resistance. Compact 3-pin TO-247 surface mount package ensuring effective thermal management.

Maximum power dissipation of 245 W supports heavy-duty usage. Ideal for off-board EV charging stations and industrial power supplies.

Explore more Infineon products and related MOSFETs on EnvMart for high quality and reliable semiconductor solutions suitable for demanding industrial, automotive, and commercial applications.