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Infineon CoolMOS P7 SJ N-Channel MOSFET, 2 A, 950 V Enhancement, 3-Pin TO-251 IPU95R3K7P7AKMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 2.41mm
Length 6.73mm
Model IPU95R3K7P7AKMA1
Width 6.22mm
Mount Type Surface
Series CoolMOS P7 SJ
Maximum Operating Temperature 150°C
Package Type TO-251
Minimum Operating Temperature -40°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 2A
Maximum Drain Source Voltage Vds 950V
Maximum Drain Source Resistance Rds 370mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 22W
Typical Gate Charge Qg @ Vgs 6nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 900mV

Key Features

  • Designed with CoolMOS P7 SJ technology for improved efficiency.
  • Features enhancement mode with integrated Zener diode for ESD protection.
  • Maximum power dissipation up to 22 W suitable for low power SMPS applications.
  • Operating temperature range from -40°C to 150°C for robust performance.
  • Low maximum drain source resistance of 370 mΩ enhances switching efficiency.
  • Typical gate charge of 6 nC at Vgs enables fast switching.
  • Maximum gate source voltage of 20 V provides operational reliability.
  • Forward voltage of 900 mV reduces conduction losses.

Product Description

Infineon IPU95R3K7P7AKMA1 is a CoolMOS P7 SJ N-Channel MOSFET designed for applications requiring high efficiency and reliable performance. It features a 2 A maximum continuous drain current and a maximum drain source voltage rating of 950 V, making it suitable for power supply and switching applications in the low power SMPS market.

Built on CoolMOS P7 SJ technology, it offers 50 V higher blocking voltage compared to its predecessor models, along with outstanding thermal behavior and ease-of-use. The device incorporates an integrated Zener diode ESD protection, which significantly enhances ESD robustness, reducing yield losses and simplifying circuit design.

The MOSFET operates efficiently within a temperature range from -40°C to 150°C, and the 3-Pin TO-251 surface mount package optimizes space usage in compact designs. Its low gate charge of approximately 6 nC facilitates high-speed switching with minimal losses, while the maximum gate source voltage rating of 20 V ensures reliable gate drive tolerance.

Key electrical characteristics include a maximum power dissipation of 22 W, a maximum drain source resistance of 370 mΩ, and a forward voltage around 900 mV. Its physical dimensions are 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height, suitable for PCB layouts requiring tight component footprints.

This MOSFET is ideal for industrial and consumer electronics applications involving power management, switching power supplies, and other semiconductor devices requiring robust, efficient, and easy-to-design components.

Designed with CoolMOS P7 SJ technology for high efficiency and reliability. Integrated Zener diode provides Class 2 ESD protection for enhanced robustness. Operates under wide temperature range for versatile industrial applications.

Compact TO-251 package fits well in space-constrained PCB layouts. Low gate charge supports fast switching and power savings. High power dissipation and blocking voltage meet demanding application needs. Suitable for power supply, industrial, and electronic circuit applications.

Explore the extensive range of Infineon semiconductor components available on EnvMart for optimized electronic design solutions.

Infineon CoolMOS P7 SJ N-Channel MOSFET, 2 A, 950 V Enhancement, 3-Pin TO-251 IPU95R3K7P7AKMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 2 A.

It has a maximum drain source voltage rating of 950 V.

The maximum power dissipation for this MOSFET is 22 W.

This MOSFET operates efficiently within a temperature range from -40°C to 150°C.

It comes in a 3-Pin TO-251 surface mount package.

The typical gate charge at Vgs is approximately 6 nC.

The maximum gate source voltage is rated at 20 V.

The maximum drain source resistance is 370 mΩ.

The forward voltage is around 900 mV, which helps reduce conduction losses.

It is designed with CoolMOS P7 SJ technology for improved efficiency.

This model is suitable for power supply, switching power supplies, and other semiconductor devices requiring efficient performance.

The country of origin for this model is India.

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