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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPU95R3K7P7AKMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | CoolMOS P7 SJ |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-251 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2A |
| Maximum Drain Source Voltage Vds | 950V |
| Maximum Drain Source Resistance Rds | 370mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 22W |
| Typical Gate Charge Qg @ Vgs | 6nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Infineon IPU95R3K7P7AKMA1 is a CoolMOS P7 SJ N-Channel MOSFET designed for applications requiring high efficiency and reliable performance. It features a 2 A maximum continuous drain current and a maximum drain source voltage rating of 950 V, making it suitable for power supply and switching applications in the low power SMPS market.
Built on CoolMOS P7 SJ technology, it offers 50 V higher blocking voltage compared to its predecessor models, along with outstanding thermal behavior and ease-of-use. The device incorporates an integrated Zener diode ESD protection, which significantly enhances ESD robustness, reducing yield losses and simplifying circuit design.
The MOSFET operates efficiently within a temperature range from -40°C to 150°C, and the 3-Pin TO-251 surface mount package optimizes space usage in compact designs. Its low gate charge of approximately 6 nC facilitates high-speed switching with minimal losses, while the maximum gate source voltage rating of 20 V ensures reliable gate drive tolerance.
Key electrical characteristics include a maximum power dissipation of 22 W, a maximum drain source resistance of 370 mΩ, and a forward voltage around 900 mV. Its physical dimensions are 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height, suitable for PCB layouts requiring tight component footprints.
This MOSFET is ideal for industrial and consumer electronics applications involving power management, switching power supplies, and other semiconductor devices requiring robust, efficient, and easy-to-design components.
Designed with CoolMOS P7 SJ technology for high efficiency and reliability. Integrated Zener diode provides Class 2 ESD protection for enhanced robustness. Operates under wide temperature range for versatile industrial applications.
Compact TO-251 package fits well in space-constrained PCB layouts. Low gate charge supports fast switching and power savings. High power dissipation and blocking voltage meet demanding application needs. Suitable for power supply, industrial, and electronic circuit applications.
Explore the extensive range of Infineon semiconductor components available on EnvMart for optimized electronic design solutions.
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