Infineon N-Channel MOSFET 137 A, 100 V Enhancement Mode, 3-Pin TO-220 IPP045N10N3GXKSA1

Infineon IPP045N10N3GXKSA1 N-Channel MOSFET is a power semiconductor device packaged in a 3-pin TO-220 format, engineered to deliver superior high-efficiency switching capabilities for industrial power management applications. The device supports a continuous drain current of 137 A and withstands a maximum drain-source voltage of 100 V, making it highly suitable for switched-mode power supplies, motor drives, and power conversion systems.

The enhancement mode channel design ensures controlled and reliable switching operations. With an on-resistance (Rds) of just 4.5 milliohms, the MOSFET achieves reduced conduction losses, improving overall system efficiency. It can dissipate power up to 214 W, backed by a robust thermal performance range from -55°C up to 175°C, enabling reliable operation in diverse industrial and commercial temperature environments.

The maximum gate-source voltage rating is 20 V with a typical forward voltage of 1.2 V, while the gate charge is minimized to 88 nC at the specified gate voltage, supporting fast switching and low gate drive losses. Packaged in a through-hole TO-220 style, the device measures approximately 29.95 mm in height, 10.36 mm in length, and 4.57 mm in width, making it compatible with conventional PCB layouts.

This MOSFET is RoHS compliant and halogen-free, ensuring environmentally sustainable use in power electronics manufacturing. Its high figure of merit enables reduced switching and conduction losses compared to previous generations, supporting applications in industrial automation, power supplies, HVAC systems, renewable energy inverters, and automotive electronics with non-automotive standard use.

Supports up to 137 A drain current for high power applications. Operates up to 100 V drain-source voltage for versatile power ranges. Low Rds(on) of 4.5 milliohms enhances energy efficiency. Enhanced switching performance with low gate charge of 88 nC.

Robust operating temperature range from -55°C to 175°C. Through-hole TO-220 package for easy PCB assembly. RoHS compliant and halogen-free materials for environmental safety. Designed for high power-density switched mode power supplies and converters.

Typical forward voltage of 1.2 V minimizes conduction loss.

Choose Infineon IPP045N10N3GXKSA1 for demanding industrial, laboratory, power supply, manufacturing, and power management applications requiring reliable and efficient power MOSFET solutions. Explore more components and semiconductor devices in the Electronics & Electricals category at EnvMart.