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Infineon N-Channel MOSFET 11A 40V 8-Pin PQFN Package Surface Mount IRL60HS118

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Infineon N-Channel MOSFET 11A 40V 8-Pin PQFN Package Surface Mount IRL60HS118

Name: Infineon N-Channel MOSFET 11A 40V 8-Pin PQFN Package Surface Mount IRL60HS118
Brand: Infineon
SKU: 179062
Price: 0.41 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IRL60HS118
Mount Type	Surface
Series	IRFH
Maximum Operating Temperature	175°C
Package Type	PQFN
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	11A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	0.7mΩ
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1V

Key Features

Offers a low 0.7mΩ drain-source resistance to minimize conduction losses.
Supports a maximum power dissipation of 81W, suitable for thermal-intensive applications.
Equipped with an 80nC typical gate charge for fast switching performance.
Operates reliably over a wide temperature range from -55°C to 175°C.
Uses an 8-pin PQFN package optimized for surface mounting and compact power boards.
Meets automotive AEC-Q101 quality standards ensuring high reliability.
Designed for automotive power distribution modules and industrial load switching.
Complies with RoHS directives restricting hazardous substances.

Product Description

Infineon IRL60HS118 N-Channel MOSFET is a robust surface-mount power transistor engineered for demanding automotive and industrial electronics applications requiring efficient high-current switching.

This device features an 11A continuous drain current capability with a low drain-source resistance of 0.7mΩ to minimize conduction losses and enhance efficiency in power stages. Its maximum power dissipation rating of 81W enables substantial thermal handling for operation under high load conditions.

The MOSFET offers a typical gate charge of 80nC allowing rapid switching suitable for high-speed circuits, with a gate-source voltage maximum of 20V to provide tolerance for variable gate drive signals. It fits in a compact 8-pin PQFN package optimized for surface mounting on modern power boards.

Rated for extreme operating temperatures from -55°C to 175°C, it meets automotive-grade reliability standards including AEC-Q101 and complies with RoHS environmental regulations. These characteristics make it ideal for applications such as automotive power distribution modules, DC-DC converters, motor control stages, and industrial load switching.

The device’s N-channel construction supports low-side switching and synchronous topologies common in efficient power electronics designs. Its robust thermal and electrical features enable performance in harsh environments where reliability and efficiency are critical.

Low 0.7mΩ drain-source resistance reduces power losses. High continuous current supports demanding loads. Fast switching enabled by 80nC gate charge. Wide operating temperature range for harsh conditions. Compact surface-mount 8-pin PQFN package.

Automotive grade with AEC-Q101 certification. RoHS compliant for environmental safety. Suitable for automotive and industrial electronics applications.

This Infineon MOSFET is a premium component choice for power electronics requiring efficient, reliable switching in automotive and industrial environments. Browse more MOSFETs and power semiconductor components on EnvMart to find the ideal fit for your design and manufacturing needs.