Infineon HEXFET Type P-Channel MOSFET 13 A 100 V Enhancement 3-Pin TO-252 IRFR5410TRLPBF

Infineon IRFR5410TRLPBF HEXFET Type P-Channel MOSFET is designed for industrial and electronic applications requiring reliable and efficient power switching components. This MOSFET supports a maximum continuous drain current of 13 amperes and a drain-source voltage rating of 100 volts. Its enhancement mode channel and ultra-low on-resistance reduce power dissipation and improve circuit performance.

The device comes in a TO-252 surface mount package featuring three pins, enabling easy integration using vapour phase, infrared, or wave soldering techniques. It operates efficiently within a temperature range of -55°C to 175°C, making it suitable for demanding environments such as industrial electronics, power management, and automotive circuits (excluding automotive-specific standards).

Key features include a maximum power dissipation of 66 watts, a typical gate charge of 58 nanocoulombs at specified gate voltages, and a maximum gate-source voltage of 20 volts for reliable switching control. The MOSFET's forward voltage drop is -1.6 volts, facilitating energy-efficient operation in power conversion and regulation roles.

This Infineon HEXFET is fully avalanche rated and lead-free, adhering to modern electronic component standards. Its rugged design ensures fast switching and durability for continuous operation in power supply, industrial machinery, and related applications. The component’s surface mount TO-252 package optimizes board space and thermal dissipation for compact electronic device designs.

This MOSFET features low on-resistance, enhancing circuit efficiency. Maximum drain-source resistance is 205 milliohms, ensuring reduced power losses. Designed for fast switching applications with typical gate charge of 58 nanocoulombs at Vgs.

Supports maximum power dissipation of 66 watts for robust operation. Operating temperature range spans from -55°C to 175°C, suitable for various environments. Enhancement mode channel with a gate-source maximum voltage of 20 volts supports stable control.

The device uses a 3-pin TO-252 surface mount package for compact PCB integration. Forward voltage drop is -1.6 volts, optimizing efficiency in power switching circuits.

This component is ideal for applications in industrial electronics, power management, semiconductor circuits, and electronic device manufacturing. Explore more Infineon semiconductor products and MOSFET devices on EnvMart for your technical needs.