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Infineon CoolMOS C7 N-Channel MOSFET 10 A 650 V Enhancement 3-Pin TO-220 IPA65R125C7XKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IPA65R125C7XKSA1
Mount Type Through Hole
Series CoolMOS C7
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 10A
Maximum Drain Source Voltage Vds 650V
Maximum Drain Source Resistance Rds 125mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 32W
Typical Gate Charge Qg @ Vgs 35nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 900mV

Key Features

  • The CoolMOS C7 series offers low RDS(on) for improved conduction efficiency.
  • Suitable for through-hole mounting in TO-220 package with 3 pins.
  • Enhanced channel mode ensures fast switching and reduced power losses.
  • Maximum power dissipation of 32 W supports high power applications.
  • Operating temperature range from -55°C to 150°C ensures reliability in harsh environments.
  • Maximum gate-source voltage of 20 V with typical gate charge of 35 nC.
  • Forward voltage drop of 900 mV enhances efficiency during conduction.
  • Ideal for SMPS, solar inverters, and other power electronics uses.

Product Description

Infineon IPA65R125C7XKSA1 CoolMOS C7 N-Channel MOSFET is engineered for high efficiency, low conduction losses, and superior switching performance. Rated for 10 A continuous drain current and 650 V maximum drain-source voltage, this 3-pin TO-220 device supports enhancement mode operation.

The CoolMOS C7 technology combines super junction design with low gate charge to optimize power density and light load efficiency, making it an excellent choice for switching power supplies, solar inverters, and general-purpose power management solutions.

This MOSFET offers a maximum power dissipation of 32 W, enabling reliable performance under demanding thermal conditions. The device maintains stable operation within a temperature range of -55°C to 150°C, with a gate-source voltage tolerance of up to 20 V and a low forward voltage drop of 900 mV that minimizes conduction losses.

The TO-220 through-hole package facilitates easy mounting and integration in industrial and commercial electronic assemblies, ensuring mechanical robustness and thermal efficiency.

The product does not carry specific industry certifications but is engineered to meet the safety needs of modern power electronics systems. The CoolMOS C7 series technology reduces switching losses for higher system efficiency.

Low RDS(on) minimizes conduction losses and enhances overall device performance. High power dissipation rating permits use in moderately high power applications. Wide operating temperature range supports diverse environmental conditions.

Compact TO-220 package allows straightforward mounting and heat dissipation. Enhanced gate charge characteristics improve switching response and reduce EMI. Designed for use in power supplies, solar inverters, and industrial electronics.

Robust electrical parameters enhance operational reliability and lifespan.

This Infineon CoolMOS C7 IPA65R125C7XKSA1 device fits within the semiconductor MOSFET category and is suitable for electronic component stock and industrial use. Explore further semiconductor options and power management components in the EnvMart portfolio to meet your engineering and manufacturing requirements.

Infineon CoolMOS C7 N-Channel MOSFET 10 A 650 V Enhancement 3-Pin TO-220 IPA65R125C7XKSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 10 A.

This MOSFET has a maximum drain-source voltage of 650 V.

It supports a maximum power dissipation of 32 W.

The operating temperature range is from -55°C to 150°C.

It comes in a TO-220 package type, suitable for through-hole mounting.

The typical gate charge is 35 nC at the gate-source voltage.

The maximum gate-source voltage is 20 V.

The forward voltage drop is 900 mV, which enhances conduction efficiency.

This model utilizes an N-channel configuration.

The maximum drain-source resistance is 125 mΩ.

It is suitable for switching power supplies, solar inverters, and general-purpose power management solutions.

The country of origin for this product is India.

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