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Infineon 800V CoolMOS P7 N-Channel MOSFET, 3 A, 800 V Enhancement Mode, 3-Pin TO-252 IPD80R2K0P7ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPD80R2K0P7ATMA1 |
| Mount Type | Surface |
| Series | 800V CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 24W |
| Typical Gate Charge Qg @ Vgs | 9nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- Operates at a maximum continuous drain current of 3 A and 800 V drain-source voltage.
- Features a low maximum drain-source resistance of 2 Ω for minimized power loss.
- Designed with a 3-pin TO-252 surface mount package for compact integration.
- Supports operation in temperature ranges from -55°C up to 150°C.
- Incorporates enhancement mode channel type with integrated Zener diode for ESD protection up to Class 2 (HBM).
- Optimized for flyback applications, adapters, chargers, LED drivers, audio SMPS, AUX, and industrial power supplies.
- Provides up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperatures compared to predecessors and competitors.
- Ensures high power density designs through low switching losses and optimized RDS(on).
Product Description
Infineon IPD80R2K0P7ATMA1 is an 800V CoolMOS P7 N-Channel MOSFET designed for reliable and efficient performance in a variety of power electronics applications. It operates at a continuous drain current of 3 A and a maximum drain-source voltage of 800 V, making it suitable for flyback converters, adapters, chargers, LED drivers, audio switch-mode power supplies (SMPS), auxiliary circuits, and industrial power applications.
This MOSFET features a 3-pin TO-252 surface mount package which offers ease of integration and effective thermal management. It utilizes an enhancement mode N-channel design, providing low gate charge (9 nC typical) and a maximum drain-source resistance of 2 Ω, enabling reduced switching losses and improved efficiency for high power density designs.
The device is qualified to operate within an ambient temperature range from -55°C up to 150°C, ensuring durability in demanding industrial environments. Integrated Zener diode ESD protection up to Class 2 (HBM) enhances device reliability and quality. Compared to its predecessor and competitor parts, the IPD80R2K0P7ATMA1 achieves efficiency gains of up to 0.6% and MOSFET temperature reductions of 2°C to 8°C in typical flyback applications.
Its low forward voltage of 900 mV and maximum power dissipation of 24 W also contribute to overall power saving and device longevity. This product family from Infineon emphasizes a fully optimized portfolio for best-in-class quality, reliability, and performance.
Maximum continuous drain current: 3 A. Maximum drain-source voltage: 800 V. Maximum drain-source resistance: 2 Ω. Package type: 3-Pin TO-252 surface mount. Operating temperature range: -55°C to 150°C. Typical gate charge: 9 nC at Vgs.
Maximum gate-source voltage: ±20 V. Forward voltage: 900 mV. Maximum power dissipation: 24 W.
This MOSFET is ideal for applications in industrial power equipment, renewable energy systems, power supply units, LED lighting drivers, and other semiconductor-based electronic devices requiring efficient switching and thermal management.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3 A.
It can handle a maximum drain-source voltage of 800 V.
The maximum drain-source resistance is 2 Ω, which helps minimize power loss.
This model comes in a 3-pin TO-252 surface mount package.
It operates within a temperature range of -55°C to 150°C.
The typical gate charge is 9 nC at Vgs.
It is optimized for flyback applications, adapters, chargers, LED drivers, audio SMPS, and industrial power supplies.
The maximum power dissipation is 24 W.
The forward voltage is 900 mV.
It incorporates an enhancement mode N-channel design.
The maximum gate-source voltage is ±20 V.
The country of origin for this model is India.
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