Infineon 700V CoolMOS P7 N-Channel MOSFET, 12.5 A Continuous Drain Current, 360 mΩ RDS(on), 59.5 W Power IPD70R360P7SAUMA1

Infineon IPD70R360P7SAUMA1 700V CoolMOS P7 N-Channel MOSFET is a high-voltage enhancement-mode MOSFET tailored for switch-mode power conversion and efficient power handling in industrial applications. Featuring a 700 V maximum drain-source voltage and continuous drain current of 12.5 A, this device supports robust power switching and blocking capabilities within compact surface-mount assemblies.

The device is housed in a space-saving TO-252 package with three pins, facilitating straightforward PCB layout and mounting. Its low on-resistance (360 mΩ) reduces conduction losses, while the 59.5 W power dissipation rating enables sustained thermal management during operation.

Gate drive design benefits from a typical gate charge of 16.4 nC, lowering switching energy losses and allowing efficient timing control. The MOSFET can be reliably operated over a wide temperature range from -40°C to +150°C, ensuring versatility in demanding environments.

Its maximum gate-source voltage rating of ±16 V provides adequate margin for typical gate drive voltages in power electronics. A forward voltage of 0.9 V influences conduction losses and should be considered in circuit design.

This MOSFET is ideal for applications such as high-voltage SMPS primary switches, industrial power converters, flyback and forward topology power supplies, as well as power-factor correction front-end circuits. It is also suitable for high-voltage testing and laboratory use.

Supports continuous drain current of 12.5 A for substantial load handling. 700 V drain-source voltage for high-voltage switching. Low RDS(on) resistance of 360 mΩ reduces power loss. 59.5 W power dissipation rating enhances thermal performance.

Compact TO-252 surface mount package with 3 pins. Typical gate charge of 16.4 nC for efficient switching. Wide operating temperature range from -40°C to 150°C. Maximum gate-source voltage rating of ±16 V allows standard gate-drive margins.

Forward voltage drop of 0.9 V affects conduction loss calculations. Applications include industrial power conversion, SMPS, and power-factor correction. Browse the Electronics & Electricals Semiconductors category at EnvMart for advanced MOSFETs and discrete semiconductor components from trusted brands like Infineon.