$1.36
$1.32
Tax included
World's First Climate Tech Platform | Free Delivery in India | Global Shipping

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IRF3709ZSTRRPBF |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 87A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 7.8mΩ |
| Maximum Power Dissipation Pd | 79W |
| Typical Gate Charge Qg @ Vgs | 26nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
The Infineon IRF3709ZSTRRPBF is a HEXFET type N-Channel MOSFET engineered for high current applications requiring low RDS(on) and rugged device characteristics. This MOSFET is housed in a TO-263 package suitable for surface mounting on printed circuit boards and features a 3-pin layout facilitating straightforward integration.
With a maximum continuous drain current (Id) of 87 A and a maximum drain-source voltage (Vds) of 30 V, this device caters to medium power electronics and power management circuits.
Its low maximum drain-source resistance of 7.8 milliohms ensures efficient conduction with minimal losses, complemented by a maximum power dissipation rating of 79 W to accommodate rigorous operational demands.
The device’s typical gate charge of 26 nC at rated gate-source voltages allows for rapid switching speeds beneficial in low-frequency power conversion applications. Designed to operate within a wide temperature range from -55°C to 175°C, it provides reliability under harsh industrial conditions.
Compliant with JEDEC quality standards and not classified under any automotive certification, it is primarily intended for industrial, electronic components, and power semiconductor applications.
Designed for robust surface mount electronic applications. High current capability suitable for power management circuits. Low conduction resistance for energy-efficient operation. Wide operating temperature range for industrial environments.
JEDEC qualified for assured quality and reliability. Compact TO-263 package for easy PCB integration. Optimized for low-frequency applications with ruggedness. Typical forward voltage drop minimizes power loss.
This Infineon HEXFET MOSFET series product is suited for use in industrial electronics, power supplies, motor drivers, and other applications requiring reliable power switching components.
Explore more components and electronic semiconductor devices in the Semiconductor > MOSFET category on EnvMart for comprehensive industrial-grade solutions.
Review sent
Your review cannot be sent
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent