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Infineon OptiMOS 5 N-Channel MOSFET, 62 A, 100 V, 8-Pin PQFN BSZ096N10LS5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 3.4mm |
| Model | BSZ096N10LS5ATMA1 |
| Width | 3.4mm |
| Mount Type | Surface |
| Series | OptiMOS 5 |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 62A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 13.5mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 69W |
| Typical Gate Charge Qg @ Vgs | 12nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features low on-resistance of 13.5 milliohms to minimize conduction losses.
- Supports high power dissipation of up to 69 watts for demanding applications.
- Operates safely from -55°C to 150°C ensuring reliability in harsh conditions.
- Typical gate charge of 12 nanocoulombs enables efficient fast switching.
- Provides gate-source voltage withstand capability of 20 volts for robust gate drive.
- Compact surface mount PQFN package measures 3.4 mm by 3.4 mm by 1.1 mm in size.
- Forward voltage of 1.2 volts assists with diode conduction management during switching.
- Designed for synchronous buck converters, motor drivers, telecom regulators, and battery management.
Product Description
Infineon BSZ096N10LS5ATMA1 is a high-performance OptiMOS 5 Series N-Channel MOSFET designed for efficient power switching applications. Rated at 100 V drain-source voltage and 62 A continuous drain current, it is well suited for compact PCB-level assembly in surface mount 8-pin PQFN packages.
This device offers an extremely low on-resistance of 13.5 milliohms, reducing conduction losses and improving energy efficiency in demanding electrical circuits. With a maximum power dissipation rating of 69 W, it supports elevated thermal loads during operation.
Operating temperature range from -55°C to 150°C ensures reliability across harsh industrial or automotive environments. The typical gate charge of 12 nC enables rapid switching suitable for high-frequency applications while the 20 V gate-source voltage withstand provides margin against voltage spikes.
The compact footprint of 3.4 mm length and width with 1.1 mm height makes it ideal for space-constrained boards. A forward voltage of 1.2 V supports effective diode conduction during switching events.
Infineon’s OptiMOS 5 MOSFETs find applications in synchronous buck converters for power supplies, motor drive stages requiring robust continuous current handling, fast-switching regulators used in telecom infrastructure, and battery management systems in high voltage contexts. Additionally, it is commonly used in server power distribution and data center power supplies.
Low conduction losses with 13.5 mΩ on-resistance. High current capability of 62 A continuous drain current. 100 V drain-source voltage rating for versatile use cases. Thermal tolerance from -55°C to 150°C for challenging environments.
Fast switching due to 12 nC typical gate charge. Robust gate drive protection with 20 V gate-source withstand. Compact 8-pin PQFN surface mount form factor. Forward voltage of 1.2 V aiding diode conduction management.
This Infineon OptiMOS 5 BSZ096N10LS5ATMA1 MOSFET embodies advanced semiconductor technology supporting industrial, automotive, telecommunications, and data center power management sectors. Explore the Electronics & Electricals / Semiconductor / MOSFET category at EnvMart for compatible components and accessories to optimize your designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 62 A.
It has a drain-source voltage rating of 100 V.
The on-resistance is 13.5 milliohms, which helps minimize conduction losses.
This model comes in an 8-pin PQFN package, measuring 3.4 mm by 3.4 mm by 1.1 mm.
The operating temperature range is from -55°C to 150°C, ensuring reliability in harsh conditions.
The typical gate charge is 12 nanocoulombs, enabling efficient fast switching.
The maximum power dissipation rating is 69 watts, suitable for demanding applications.
It has a maximum gate-source voltage withstand capability of 20 V.
It is designed for synchronous buck converters, motor drivers, telecom regulators, and battery management systems.
The forward voltage is 1.2 volts, which assists with diode conduction management during switching.
This model uses a surface mount type.
The channel type is N-channel, suitable for various power management applications.
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