DiodesZetex Type P-Channel MOSFET 20 V, 510 mA, Enhancement Mode, 3-Pin X2-DFN Package DMP22D5UFO-7B

DiodesZetex DMP22D5UFO-7B is a P-Channel MOSFET with a maximum continuous drain current of 510 mA and a maximum drain-source voltage of 20 V, packaged in a space-efficient 3-Pin X2-DFN surface mount package. This enhancement mode MOSFET is designed for general purpose interfacing switch applications, power management, and analog switching solutions in industrial electronics.

The device exhibits low input capacitance which facilitates fast switching speeds, making it suited for high-frequency applications. It supports a maximum power dissipation of 0.77 W to maintain stability and performance under operational loads. The MOSFET operates reliably across a wide temperature range, from -55°C minimum to 150°C maximum, ensuring robust performance in demanding environments.

Featuring a typical gate charge of 0.3 nC at Vgs and a maximum gate-source voltage of 8 V, it offers effective gate drive control for efficient switching. The maximum drain-source resistance of 1.9 Ω helps in minimizing conduction losses. The package dimensions - 650 μm length, 450 μm width, and 400 μm height - enable compact circuit designs which is important in modern electronic assemblies. Furthermore, it meets the automotive industry standard AEC-Q101, underlining its reliability for automotive and industrial applications.

Use cases include integration in power management modules, analog switches, low voltage power supply circuits, and general electronic interfacing in industrial control systems, automotive electronics, and communication equipment.

DiodesZetex is a trusted brand known for producing reliable semiconductor components ideal for a variety of industrial, automotive, and commercial electronics implementations. Designed for general purpose interfacing switches and power management functions.

Enhancement mode P-Channel MOSFET with low input capacitance. Compact 3-Pin X2-DFN surface mount package. Operating temperature range from -55°C to 150°C. Maximum continuous drain current of 510 mA and drain-source voltage of 20 V.

Maximum gate-source voltage of 8 V with typical gate charge 0.3 nC. Maximum drain-source resistance of 1.9 Ω reduces power losses. Power dissipation rated at 0.77 W for stable performance. Automotive standard AEC-Q101 compliant.

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