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Vishay EF Series N-Channel MOSFET, 8.4 A, 600 V, Enhancement Mode, 3-Pin TO-263 SiHB186N60EF-GE3

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Vishay EF Series N-Channel MOSFET, 8.4 A, 600 V, Enhancement Mode, 3-Pin TO-263 SiHB186N60EF-GE3

Name: Vishay EF Series N-Channel MOSFET, 8.4 A, 600 V, Enhancement Mode, 3-Pin TO-263 SiHB186N60EF-GE3
Brand: Vishay
SKU: 168023

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Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Height	4.06mm
Length	14.61mm
Model	SiHB186N60EF-GE3
Width	9.65mm
Mount Type	Surface
Series	EF
Maximum Operating Temperature	150°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	8.4A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	168mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	156W
Typical Gate Charge Qg @ Vgs	21nC
Maximum Gate Source Voltage Vgs	30V
Forward Voltage Vf	1.2V

Key Features

4th generation EF series technology for enhanced reliability and performance.
Low figure-of-merit leading to reduced switching and conduction losses.
D2PAK (TO-263) surface mount package for effective thermal management.
Maximum continuous drain current of 8.4 amps at 600 volts.
Low typical gate charge of 21 nC allowing faster switching.
Maximum drain-source resistance of 168 milliohms for efficient conduction.
Wide operating temperature range from -55°C to 150°C.
Maximum power dissipation rating of 156 watts.

Product Description

Vishay SiHB186N60EF-GE3 is a robust EF series N-Channel MOSFET designed for power applications requiring high efficiency and reliability. Featuring an enhancement mode operation and housed in a TO-263 (D2PAK) surface mount package, this MOSFET supports a maximum continuous drain current of 8.4 amperes and can withstand 600 volts drain-source voltage.

This device incorporates 4th generation EF series technology, which offers a low figure-of-merit combining a low on-resistance and gate charge (Ron x Qg), thereby reducing switching and conduction losses significantly. Its fast body diode design enables avalanche energy handling making it reliable for switching power supply and motor control applications.

Its typical gate charge of 21 nanocoulombs at Vgs ensures high-speed switching capability while maintaining efficiency. The device operates reliably across a broad temperature range from -55°C to 150°C and features a maximum power dissipation of 156 watts, suitable for demanding electronic circuits in industrial, automotive, and power management domains.

The SiHB186N60EF-GE3 has a compact form factor measuring 14.61 mm in length, 9.65 mm width, and 4.06 mm height, enabling easy integration into space-constrained PCB layouts. It has three pins and is designed for surface mounting to simplify assembly.

4th generation EF series technology reduces switching and conduction losses. Low figure-of-merit (Ron x Qg) for improved efficiency. D2PAK (TO-263) package supports robust surface mounting. Enhancement mode operation suitable for power switching applications.

Maximum drain current of 8.4 A and voltage of 600 V. Wide operating temperature range from -55°C to 150°C. Maximum power dissipation rating of 156 W ensures durability. Typical gate charge of 21 nC enables fast switching speeds.

Compact dimensions ideal for industrial and automotive electronics. Fast body diode supports avalanche energy handling.

This Vishay MOSFET is ideal for applications in industrial power management systems, motor drives, automotive electronics, and power supplies where high efficiency and reliability are critical. Explore related power semiconductors and components in the Electronics & Electricals category at EnvMart.

Explore more products in our Power MOSFET category.