Vishay E Series N-Channel MOSFET, 7.5 A, 800 V Enhancement Mode, 3-Pin TO-220 SIHA21N80AE-GE3

Vishay SIHA21N80AE-GE3 is a high-performance E series N-Channel MOSFET designed for power electronics applications requiring robust switching and high voltage tolerance. With a maximum continuous drain current of 7.5 amperes and a high drain-source voltage rating of 800 volts, this device is engineered to handle demanding power loads in industrial, automotive, and consumer electronics.

The device employs enhancement mode channel technology delivering low conduction and switching losses due to its optimized gate charge of 48 nanocoulombs and low drain-source resistance of 205 milliohms. Its TO-220 full-pack thin-lead package supports through-hole mounting, making it suitable for a variety of PCB assembly processes.

The MOSFET supports a power dissipation of up to 33 watts, ensuring efficient heat management in operational environments. It can operate reliably over a broad temperature range from -55°C to 150°C, enabling use in harsh and variable climatic conditions.

Key technical parameters include a maximum gate-source voltage of 30 volts, forward voltage drop of 1.2 volts, and physical dimensions of 28.1mm length by 9.7mm width and 4.3mm height, providing a compact solution for power management tasks.

Supports maximum continuous drain current of 7.5 amperes for efficient load handling. Operates at a maximum drain-source voltage of 800 volts suitable for high voltage applications. Features enhancement mode channel type for fast switching performance.

Incorporates low drain-source on-resistance (Rds) of 205 milliohms reducing conduction losses. Designed in a TO-220 full-pack thin-lead package facilitating through-hole mounting. Can dissipate power up to 33 watts ensuring reliable thermal performance.

Wide operating temperature range from -55°C to 150°C for diverse environmental conditions. Maximum gate-source voltage rating of 30 volts protects the device during operation. Typical gate charge of 48 nanocoulombs at Vgs enhances switching efficiency.

Dimensions approximately 28.1mm length, 9.7mm width, and 4.3mm height for compact PCB footprint.

This MOSFET is suitable for a wide range of industrial and commercial applications including power supplies, motor control, automotive electronics, and general purpose power switching circuits. Its robust design and performance make it ideal for integration into electronic component assemblies where reliability and efficiency are critical.

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