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STMicroelectronics N-Channel MOSFET 91 A 1.2 kV Enhancement Mode 4-Pin Hip-247 SCTWA70N120G2V-4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 5mm |
| Length | 34.8mm |
| Model | SCTWA70N120G2V-4 |
| Width | 15.6mm |
| Mount Type | Through Hole |
| Series | SCTWA70N120G2V-4 |
| Maximum Operating Temperature | 200°C |
| Package Type | Hip-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 91A |
| Maximum Drain Source Voltage Vds | 1.2kV |
| Maximum Drain Source Resistance Rds | 30mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 547W |
| Typical Gate Charge Qg @ Vgs | 150nC |
| Maximum Gate Source Voltage Vgs | 22V |
| Forward Voltage Vf | 2.7V |
Key Features
- Maximum continuous drain current of 91 amperes provides robust power handling.
- Maximum drain-source voltage is rated at 1.2 kilovolts suitable for high-voltage circuits.
- Enhancement mode channel type with low drain-source resistance of 30 milliohms enhances efficiency.
- 4-pin Hip-247 package designed for through-hole mounting ensures secure installation.
- Maximum power dissipation capacity of 547 watts supports heavy load conditions.
- Operating temperature range spans from -55 °C to a maximum of 200 °C for high reliability.
- Features extremely low gate charge of 150 nanocoulombs for fast switching.
- Maximum gate-source voltage rating is 22 volts for stable operation.
Product Description
The STMicroelectronics SCTWA70N120G2V-4 is an N-Channel MOSFET power semiconductor device that delivers exceptional performance in high-voltage and high-current applications. Built using advanced 2nd generation silicon carbide (SiC) MOSFET technology, this device ensures very low on-resistance per unit area combined with excellent switching speed.
This power transistor features a maximum continuous drain current of 91 A and a drain-source voltage rating of 1.2 kV, making it ideal for use in industrial, power management, and electronic power conversion equipment. The device is housed in a 4-pin Hip-247 through-hole package, facilitating robust mounting and heat dissipation for demanding environments.
With an enhancement mode channel, it exhibits a very low maximum drain-source resistance of 30 milliohms, minimizing conduction losses. The maximum power dissipation of 547 W helps maintain device stability under heavy operational loads. It supports a wide operating temperature range from -55 °C up to 200 °C, which broadens its application in harsh industrial and automotive environments.
Additional features include a very fast and robust intrinsic body diode, low typical gate charge of 150 nC at Vgs, and a maximum gate-source voltage rating of 22 V, all of which contribute to high efficiency and reliability in switching circuits.
This MOSFET is suitable for use in power electronics systems found in industrial machinery, renewable energy inverters, electric vehicles, and high-temperature operating conditions, where high efficiency and durability are paramount.
Maximum continuous drain current of 91 A. Rated drain-source voltage of 1.2 kV. Low on-resistance with 30 mΩ maximum value. 4-pin Hip-247 package designed for through-hole mounting. Maximum power dissipation of 547 W for demanding applications.
Operating temperature from -55 °C up to 200 °C. Low gate charge of 150 nC enhances switching speed. Maximum gate-source voltage rating of 22 V ensures operational stability. Robust intrinsic body diode with forward voltage of 2.7 V.
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Frequently Asked Questions
The maximum continuous drain current for this model is 91 amperes.
This MOSFET has a maximum drain-source voltage rating of 1.2 kilovolts.
The maximum drain-source resistance for this device is 30 milliohms, which enhances efficiency.
It supports a maximum power dissipation of 547 watts, suitable for heavy load conditions.
The operating temperature range spans from -55 °C to a maximum of 200 °C.
This model is housed in a 4-pin Hip-247 package designed for through-hole mounting.
The typical gate charge is 150 nanocoulombs, which enhances switching speed.
It has a maximum gate-source voltage rating of 22 volts, ensuring stable operation.
The forward voltage of the intrinsic body diode is 2.7 volts.
The dimensions of this model are 5 mm in height, 34.8 mm in length, and 15.6 mm in width.
It features an enhancement mode channel type, which is characteristic of N-channel MOSFETs.
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