STMicroelectronics N-Channel MOSFET, 3.5 A, 600 V Enhancement Mode, 3-Pin TO-252 STD5N

STMicroelectronics STD5N is a high-voltage N-channel Power MOSFET designed for demanding industrial and electronic applications requiring efficient switching and high reliability. The STD5N MOSFET supports a maximum continuous drain current of 3.5 A and withstands drain-source voltages up to 600 V, making it ideal for applications such as power converters, motor drives, and power management systems.

Its enhancement mode channel enables optimal switching performance with low on-resistance of 1.55 Ω, reducing conduction losses. The device dissipates up to 45 W of power and operates reliably over a broad temperature range from -55°C to 150°C, suitable for harsh industrial environments.

The MOSFET utilizes a 3-pin TO-252 surface mount package that offers compact dimensions (6.6 mm length × 6.2 mm width × 2.2 mm height) for efficient PCB layout and thermal management. It features an extremely low gate charge of 5.3 nC at Vgs, which minimizes switching losses and improves overall system efficiency.

Additional features include a fast-recovery body diode integrated with extremely low recovery charge and time, combined with high dv/dt ruggedness and built-in zener-protection to withstand voltage spikes and transient conditions.

This high-performance MOSFET is optimal for use in bridge topologies, zero-voltage switching (ZVS) phase-shift converters, and other applications demanding efficient power conversion in industrial, manufacturing, HVAC, and electronic component assembly contexts.

This MOSFET features an enhancement mode N-channel design ensuring efficient power switching. Maximum continuous drain current rating of 3.5 A supports moderate power applications. High voltage rating of 600 V accommodates demanding industrial power systems.

Compact TO-252 surface mount package enables space-saving PCB designs. Low gate charge (5.3 nC) reduces switching energy losses for better efficiency. Built-in zener protection and ruggedness improve device durability against surges.

Fast recovery body diode suitable for high-efficiency converter topologies. Broad operational temperature range (-55°C to 150°C) supports harsh environments. Applications include power industrial converters, motor drives, and phase-shift topologies.

Made in China with rigorous quality standards. Explore the MOSFET category at EnvMart for a wide range of semiconductor power components tailored to industrial and electronic engineering needs.