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STMicroelectronics N-Channel MOSFET, 13 A, 600 V, Enhancement Mode, 3-Pin TO-263 Package STB18N60M6
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.37mm |
| Length | 10.4mm |
| Model | STB18N60M6 |
| Width | 9.35mm |
| Mount Type | Surface |
| Series | STB |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 13A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 280mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 16.8nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.6V |
Key Features
- The device operates in enhancement mode for improved control and efficiency.
- It features a TO-263 package with 3 pins suitable for surface mounting.
- Low drain-source resistance of 280 milliohms to reduce conduction losses.
- Maximum power dissipation is 110 W, supporting robust applications.
- Operates between temperatures of -55°C and 150°C, suitable for industrial environments.
- Typical gate charge at gate-source voltage is 16.8 nC, enabling fast switching.
- Maximum gate-source voltage is 25 V to protect the device from over-voltage.
Product Description
STMicroelectronics STB18N60M6 is a high-performance N-Channel MOSFET designed for industrial and electronic semiconductor applications that require efficiency and durability. It supports a continuous drain current of 13 A and a maximum drain-source voltage of 600 V, making it ideal for power switching and conversion circuits.
Incorporating enhancement mode channel technology and packaged in a TO-263 3-pin surface mount package, this MOSFET ensures reliable operation under demanding conditions. With a low drain-source resistance of 280 mΩ, it minimizes power loss during conduction, contributing to energy-efficient designs.
The device supports a maximum power dissipation of 110 W and operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for use in harsh industrial, power management, and consumer electronics environments.
Typical gate charge of 16.8 nC at the specified gate voltage facilitates fast switching speed, while the maximum gate-source voltage rating of 25 V protects the MOSFET against voltage spikes.
The device operates in enhancement mode for precise and efficient switching. Low Rds(on) enhances energy efficiency and thermal performance. Compact TO-263 package allows for surface mounting on PCBs. Wide operating temperature range ensures reliable industrial use.
High power dissipation capacity meets demanding power circuit needs. Suitable for power conversion, motor control, and switching regulator applications. Manufactured using advanced MDmesh M6 technology for optimized performance.
Originating from China, this MOSFET is new and compliant with industry standards, tailored for use in electronics manufacturing, industrial automation, and power electronics sectors.
Explore additional power semiconductor devices from STMicroelectronics in the MOSFET category at EnvMart for your design and development projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 13 A.
It has a maximum drain-source voltage of 600 V.
This model comes in a TO-263 package type with 3 pins.
The device operates between -55°C and 150°C.
The typical gate charge is 16.8 nC at the specified gate-source voltage.
It supports a maximum power dissipation of 110 W.
The low drain-source resistance is 280 mΩ, which helps reduce conduction losses.
The maximum gate-source voltage is 25 V, which protects the device from over-voltage.
This model is designed for surface mounting.
It is suitable for power conversion, motor control, and switching regulator applications.
It is manufactured using advanced MDmesh M6 technology for optimized performance.
The forward voltage is 1.6 V.
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