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Infineon HEXFET N-Channel MOSFET, 85 A, 150 V Enhancement Mode, 3-Pin TO-220 IRFB4321PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.02mm |
| Length | 10.66mm |
| Model | IRFB4321PBF |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 85A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 15mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 350W |
| Typical Gate Charge Qg @ Vgs | 71nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -1.2V |
| Infineon HEXFET N-Channel MOSFET, 84 A, 60 V Enhancement, 3-Pin TO-220Brand | Infineon |
Key Features
- The MOSFET supports a maximum continuous drain current of 85 amperes.
- It has a maximum drain-to-source voltage rating of 150 volts.
- Constructed in a TO-220 through-hole package with 3 pins facilitating easy mounting.
- Features an enhancement mode channel with low drain-source resistance of 15 milliohms.
- Can dissipate up to 350 watts of power ensuring high performance under load.
- Operates reliably between -55°C to 175°C temperature range.
- Designed for motor control and AC-DC synchronous rectifier applications.
- Compliant with RoHS environmental standards ensuring safe use.
Product Description
Infineon IRFB4321PBF HEXFET N-Channel MOSFET is engineered for high power and efficient switching in industrial and electronic applications. This discrete semiconductor device is housed in a 3-pin TO-220 through-hole package, offering robust heat dissipation and easy integration into circuit boards.
With a maximum continuous drain current of 85A and a drain-source voltage of 150V, it provides reliable performance suitable for motor control systems, synchronous rectifiers in AC-DC power supplies, and other power electronics requiring efficient switching.
The device features an enhancement mode channel that achieves low on-resistance of 15 milliohms, minimizing energy loss and heat generation. It also supports a maximum power dissipation of 350W, ensuring stable operation even under heavy load conditions.
Durability is assured with a wide operating temperature range from -55°C up to 175°C, making it ideal for rugged industrial environments and automotive applications not certified to AEC-Q101 standards.
The compact dimensions of 10.66mm length, 9.02mm height, and 4.82mm width facilitate versatile PCB layouts. The MOSFET supports a maximum continuous drain current of 85 amperes. It has a maximum drain-to-source voltage rating of 150 volts.
Constructed in a TO-220 through-hole package with 3 pins facilitating easy mounting. Features an enhancement mode channel with low drain-source resistance of 15 milliohms. Can dissipate up to 350 watts of power ensuring high performance under load.
Operates reliably between -55°C to 175°C temperature range. Designed for motor control and AC-DC synchronous rectifier applications. Compliant with RoHS environmental standards ensuring safe use.
This MOSFET is suitable for use in industrial motor controllers, power supply units, and synchronous rectification circuits, enhancing power density and system efficiency. Designed for demanding electronic uses, Infineon’s HEXFET technology ensures lower energy loss and improved switching performance.
Explore a wide range of Infineon semiconductors at EnvMart for advanced power management solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 85 amperes.
It has a maximum drain-to-source voltage rating of 150 volts.
This unit can dissipate up to 350 watts of power, ensuring high performance under load.
It operates reliably within a temperature range of -55°C to 175°C.
This model is housed in a TO-220 through-hole package with 3 pins, facilitating easy mounting.
The enhancement mode channel features a low drain-source resistance of 15 milliohms.
It is designed for motor control systems and AC-DC synchronous rectifier applications.
The dimensions of this model are 10.66mm in length, 9.02mm in height, and 4.82mm in width.
This unit is compliant with RoHS environmental standards, ensuring safe use.
The typical gate charge at Vgs is 71 nanocoulombs (nC).
The maximum gate-source voltage rating for this model is -30V to +30V.
It features an N-channel enhancement mode.
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