onsemi Silicon Carbide Schottky Diode 650 V 9.1 A TO-252 Surface Mount 3-Pin DPAK FFSD0665B

onsemi FFSD0665B Silicon Carbide Schottky Diode is engineered for high performance power semiconductor applications, rated at 650 V maximum repetitive peak reverse voltage and 9.1 A continuous forward current. Its TO-252 DPAK surface mount package with 3 pins facilitates easy PCB mounting in compact designs.

Silicon Carbide (SiC) technology provides excellent switching characteristics with no reverse recovery current and temperature independent behavior, contributing to high efficiency and reduced electromagnetic interference (EMI). The diode demonstrates outstanding thermal performance suitable for industrial, automotive, and power management systems.

The diode sustains high surge and avalanche currents, with a peak non-repetitive forward surge current rating of 493 A, enabling robustness under transient conditions. It operates efficiently across a wide temperature range from -55°C to 175°C, making it apt for demanding environments.

Its low forward voltage drop (max 2.4 V) further optimizes efficiency, reducing power dissipation and improving system thermal management. The ultra-fast switching capability and low junction capacitance make it ideal for power factor correction (PFC), switch mode power supplies (SMPS), and electric vehicle powertrains.

Package dimensions are 6.73 mm length, 2.39 mm width, and 6.22 mm height, suitable for compact assemblies. This diode is compliant with industrial standards but does not carry specific automotive or other approvals. It is manufactured in China.

Features high maximum continuous forward current of 9.1 amperes. Supports peak reverse repetitive voltage of 650 volts for robust operation. Employs a single diode configuration with a Schottky rectifier type for efficient switching.

Offers low forward voltage drop maximum of 2.4 volts enhancing power efficiency. Operates reliably within temperature range from -55°C to 175°C. Compact dimensions: length 6.73 mm, width 2.39 mm, and height 6.22 mm. High surge current capacity with peak non-repetitive forward surge current of 493 amperes.

Features low leakage current with peak reverse current at 160 microamperes. Constructed using Silicon Carbide (SiC) technology for superior thermal and switching performance. Designed for applications requiring high efficiency, fast switching, and increased power density.

This onsemi SiC Schottky Diode FFSD0665B is highly suitable for industrial power controls, renewable energy systems, automotive electronics, and other commercial electronics requiring robust, efficient diode solutions. Browse our electronics and semiconductor categories for compatible components and accessories.

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