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Wolfspeed N-Channel MOSFET 22 A, 900 V Enhancement Mode, 7-Pin TO-263 Package C3M0120090J

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Wolfspeed N-Channel MOSFET 22 A, 900 V Enhancement Mode, 7-Pin TO-263 Package C3M0120090J

Name: Wolfspeed N-Channel MOSFET 22 A, 900 V Enhancement Mode, 7-Pin TO-263 Package C3M0120090J
Brand: Wolfspeed
SKU: 159980
Price: 13.94 USD
Availability: InStock

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Category MOSFET Brand Wolfspeed Condition New

Specifications

Country of Origin	United States
Brand	Wolfspeed
Height	4.57mm
Length	10.23mm
Model	C3M0120090J
Width	9.12mm
Mount Type	Surface
Series	C3M
Maximum Operating Temperature	150°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	7
Channel Type	N
Maximum Continuous Drain Current Id	22A
Maximum Drain Source Voltage Vds	900V
Maximum Drain Source Resistance Rds	120mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	83W
Typical Gate Charge Qg @ Vgs	17.3nC
Maximum Gate Source Voltage Vgs	-8, 18V
Forward Voltage Vf	4.8V

Key Features

Maximum continuous drain current of 22 amperes allowing efficient current handling.
High maximum drain-source voltage of 900 volts for robust insulation.
Low maximum drain-source resistance of 120 milliohms reducing conduction losses.
Capable of operating between -55°C and 150°C for versatile temperature environments.
Typical gate charge of 17.3 nanocoulombs enabling fast switching.
Maximum power dissipation of 83 watts supporting high power applications.
Package type TO-263, surface mount suitable for compact PCB designs.
Forward voltage drop of 4.8 volts enhancing efficiency in conduction.

Product Description

Wolfspeed C3M0120090J is an N-Channel Enhancement Mode MOSFET featuring a maximum continuous drain current of 22 A and a drain-source voltage rating of 900 V. Encapsulated in a 7-Pin TO-263 surface mount package, it is engineered for use in high-frequency power electronics applications such as renewable-energy inverters, electric-vehicle charging systems, and industrial power supplies.

This MOSFET's low on-resistance of 120 mΩ and high power dissipation rating of 83 W enable efficient power handling and thermal performance. The device supports operating temperatures ranging from -55°C up to 150°C, making it suitable for harsh industrial environments.

Equipped with a typical gate charge of 17.3 nC at Vgs and featuring a forward voltage of 4.8 V, the device offers fast switching capabilities and improved efficiency. Its small form factor with dimensions approximately 10.23 mm length, 9.12 mm width, and 4.57 mm height allows compact PCB integration.

This MOSFET incorporates avalanche ruggedness and a fast intrinsic diode with low reverse recovery charge, enhancing device reliability and switching speed in demanding applications. The package and device characteristics facilitate easy paralleling and simple gate drive design, ideal for complex power electronic circuits.

Maximum continuous drain current of 22 A. 900 V maximum drain-source voltage. Low on-resistance of 120 mΩ. High power dissipation rating of 83 W. Operating temperature range from -55°C to 150°C. Surface mount TO-263 package with 7 pins.

Fast switching with low gate charge of 17.3 nC. Forward voltage of 4.8 V for improved conduction efficiency. Designed for high-frequency and high-efficiency power electronics. Manufactured in the United States.

This Wolfspeed MOSFET is ideal for industrial, renewable energy, electric vehicle, and manufacturing power conversion systems requiring reliable, high-performance semiconductor devices. It enables next-generation power electronics with compact design and cost-effective performance. Explore more Wolfspeed semiconductor components in the EnvMart MOSFET category.