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onsemi N-Channel MOSFET, 20 A, 650 V Enhancement Mode, 3-Pin TO-220 Package NTPF190N65S3HF

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onsemi N-Channel MOSFET, 20 A, 650 V Enhancement Mode, 3-Pin TO-220 Package NTPF190N65S3HF

Name: onsemi N-Channel MOSFET, 20 A, 650 V Enhancement Mode, 3-Pin TO-220 Package NTPF190N65S3HF
Brand: onsemi
SKU: 158601
Price: 3.7 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	16.12mm
Length	10.63mm
Model	NTPF190N65S3HF
Width	4.9mm
Mount Type	Through Hole
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	20A
Maximum Drain Source Voltage Vds	650V
Maximum Drain Source Resistance Rds	190mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	36W
Typical Gate Charge Qg @ Vgs	34nC
Maximum Gate Source Voltage Vgs	30V
Forward Voltage Vf	1.3V

Key Features

Enhancement mode N-channel MOSFET designed for high voltage applications.
Maximum continuous drain current of 20 amperes ensures robust power handling.
Low typical gate charge of 34 nC for efficient switching performance.
Power dissipation rating of 36 watts supports reliable thermal management.
Compact TO-220 through hole mounting with 3 pins for easy PCB integration.
Low on-resistance of 190 milliohms minimizes conduction losses.
Wide operating temperature range from -55°C to 150°C for versatile environments.
Forward voltage of 1.3 V and gate-source voltage up to 30 V specified.

Product Description

onsemi NTPF190N65S3HF N-Channel MOSFET is a high voltage enhancement mode semiconductor device packaged in a 3-pin TO-220 form factor. It supports a maximum drain current of 20 A and a maximum drain-source voltage of 650 V, enabling efficient power switching in diverse applications.

Featuring the latest SUPERFET III technology, this MOSFET utilizes charge balance and super-junction design techniques to deliver ultra-low on-resistance and gate charge values, improving conduction efficiency and switching speed. Typical gate charge is approximately 34 nC, and typical on-resistance is 161 mΩ, with a maximum of 190 mΩ, making it suitable for high efficiency power systems.

The device operates reliably across a broad temperature range from -55°C minimum to 150°C maximum junction temperature. Its maximum power dissipation is rated at 36 watts, supporting thermal loads in demanding industrial, computing, and telecom power management environments. The 3-pin through-hole mounting TO-220 package measures approximately 16.12 mm in height, 10.63 mm in length, and 4.9 mm in width, providing practical compatibility with standard heat sinks and PCB layouts.

Typical applications include computing devices like notebooks, desktops and game consoles, telecom and server power supplies, LED lighting ballasts, and adapters. Its optimized reverse recovery performance improves system reliability by reducing additional component requirement, especially in LLC and phase shift full bridge circuits.

Enhancement mode N-channel MOSFET technology for power applications. Capable of handling 20 A continuous drain current. Voltage rating of 650 V suitable for various power electronics. Low gate charge and on-resistance for improved switching efficiency.

Compact TO-220 through hole package ensures easy installation and thermal management. Designed for industrial, computing, telecom, and consumer electronics applications. Wide temperature range operation enhances reliability across conditions.

Advanced SUPERFET III technology enhances conduction and switching performance. Explore a wide range of semiconductor devices and power management components on EnvMart for your industrial and electronic manufacturing requirements.