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Vishay N-Channel Enhancement MOSFET 60 A 40 V Surface Mount SO-8 Package 8-Pin SQJA38EP-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.01mm |
| Length | 5mm |
| Model | SQJA38EP-T1_GE3 |
| Width | 4.47mm |
| Mount Type | Surface |
| Series | SQJA38EP |
| Maximum Operating Temperature | 175°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 60A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 6.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 68W |
| Typical Gate Charge Qg @ Vgs | 48.2nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features a compact SO-8 surface mount package with 8 pins for efficient PCB design.
- Low maximum drain source resistance of 6.7 milliohms ensures minimal power loss.
- High maximum power dissipation rating of 68 W supports robust operation.
- Suitable for industrial, automotive, and power management applications with AEC-Q101 automotive compliance.
- Operates in a wide temperature range from -55°C to 175°C for reliable performance.
- Typical gate charge is 48.2 nC at Vgs, allowing fast switching.
- Maximum gate source voltage of 20 V protects against voltage spikes.
- TrenchFET technology enhances efficiency and reduces switching losses.
Product Description
Vishay SQJA38EP-T1_GE3 is an automotive-grade N-Channel Enhancement-mode MOSFET designed to provide 60 amperes continuous drain current and 40 volts maximum drain source voltage. The device features an 8-pin SO-8 surface mount package with compact dimensions of 5 mm length, 4.47 mm width, and 1.01 mm height, making it suitable for high-density PCB layouts.
With a low maximum drain source resistance of 6.7 milliohms and a high power dissipation capability of 68 watts, the SQJA38EP-T1_GE3 MOSFET delivers efficient power handling and energy savings. The maximum operating temperature is rated at 175 degrees Celsius, while it maintains functionality down to -55 degrees Celsius for demanding industrial and automotive environments.
The device incorporates TrenchFET technology to optimize switching speed and reduce conduction losses, resulting in enhanced performance in power management circuits. Its typical gate charge of 48.2 nC at Vgs allows for fast switching, beneficial in high-frequency applications.
Its AEC-Q101 automotive standard compliance implies reliability in harsh automotive conditions such as voltage spikes and temperature extremes. The maximum gate source voltage of 20 volts provides robust protection for the gate oxide layer.
The SQJA38EP-T1_GE3 MOSFET is ideal for use in industrial electronics, automotive power control, DC/DC converters, and other power switching applications requiring a reliable, efficient, and compact semiconductor device.
Features a compact SO-8 surface mount package with 8 pins for efficient PCB design. Low maximum drain source resistance of 6.7 milliohms ensures minimal power loss. High maximum power dissipation rating of 68 W supports robust operation.
Suitable for industrial, automotive, and power management applications with AEC-Q101 automotive compliance. Operates in a wide temperature range from -55°C to 175°C for reliable performance. Typical gate charge is 48.2 nC at Vgs, allowing fast switching.
Maximum gate source voltage of 20 V protects against voltage spikes. TrenchFET technology enhances efficiency and reduces switching losses. Explore more automotive and industrial-grade semiconductors and Power MOSFETs on EnvMart for your next design or production project.
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Frequently Asked Questions
The maximum continuous drain current for the SQJA38EP-T1_GE3 is 60 amperes.
The maximum drain source voltage is 40 volts.
It has a maximum power dissipation rating of 68 watts.
This MOSFET is packaged in an SO-8 type with 8 pins.
The maximum operating temperature is rated at 175 degrees Celsius.
The minimum operating temperature is -55 degrees Celsius.
The maximum gate source voltage is 20 volts.
The typical gate charge at Vgs is 48.2 nanocoulombs.
It utilizes TrenchFET technology to enhance efficiency and reduce switching losses.
The SQJA38EP-T1_GE3 complies with the AEC-Q101 automotive standard.
The dimensions are 5 mm in length, 4.47 mm in width, and 1.01 mm in height.
This MOSFET is suitable for industrial electronics, automotive power control, and DC/DC converters.
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