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Vishay N-Channel MOSFET 19 A 600 V Enhancement, 3-Pin TO-247 SIHG22N60EF-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 20.82mm |
| Length | 15.87mm |
| Model | SIHG22N60EF-GE3 |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | SiHG22N60EF |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 19A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 182mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 179W |
| Typical Gate Charge Qg @ Vgs | 48nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Delivers a maximum continuous drain current of 19 amperes.
- Features a maximum drain-source voltage of 600 volts.
- Incorporates low drain-source resistance of 182 milliohms for efficient conduction.
- Supports a maximum power dissipation of 179 watts.
- Operates in enhancement channel mode for improved switching performance.
- Provides a high maximum gate-source voltage of 30 volts.
- Designed for through-hole mounting with a compact TO-247 package.
- Wide operating temperature range from -55°C up to 150°C.
Product Description
Vishay SIHG22N60EF-GE3 is a high-performance N-Channel Power MOSFET featuring a 19 ampere maximum continuous drain current and a 600 V maximum drain-source voltage capability. Packaged in a 3-pin TO-247 through-hole configuration, this transistor offers enhanced conduction efficiency with a low figure-of-merit (FOM) characterized by a drain-source resistance of 182 milliohms and a typical gate charge of 48 nanocoulombs. The device supports a maximum power dissipation of 179 watts, making it suitable for demanding power supply applications.
The enhancement mode channel design ensures reliable switching with reduced conduction and switching losses, fitting applications such as server and telecom power supplies, switch mode power supplies (SMPS), and power factor correction (PFC) units. It operates reliably over a broad temperature range from -55°C to 150°C, providing robustness in industrial and commercial environments.
The SIHG22N60EF-GE3’s robust design includes a maximum gate-source voltage of 30 volts and a forward voltage drop of 1.2 volts, ensuring fast body diode recovery and low forward conduction losses.
Maximum continuous drain current: 19 A. Maximum drain-source voltage: 600 V. Drain-source resistance: 182 mΩ. Power dissipation capability: 179 W. Enhancement type channel for fast switching. Typical gate charge: 48 nC. Operating temperature range from -55°C to 150°C.
3-pin TO-247 package with through-hole mount. Maximum gate-source voltage of 30 V.
This MOSFET is ideal for industrial, laboratory, and commercial power electronics applications, particularly in power management systems requiring efficient, high-current switching devices. It is compliant with standard manufacturing and quality controls ensuring durability and performance.
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Frequently Asked Questions
The maximum continuous drain current of this model is 19 amperes.
It has a maximum drain-source voltage rating of 600 volts.
The drain-source resistance is 182 milliohms, which contributes to its efficient conduction.
This MOSFET supports a maximum power dissipation of 179 watts.
The typical gate charge is 48 nanocoulombs.
It operates reliably over a temperature range from -55°C to 150°C.
This model is packaged in a 3-pin TO-247 configuration designed for through-hole mounting.
The maximum gate-source voltage for this device is 30 volts.
It is suitable for applications such as server and telecom power supplies, switch mode power supplies (SMPS), and power factor correction (PFC) units.
The dimensions are 20.82 mm in height, 15.87 mm in length, and 5.31 mm in width.
This device uses an enhancement type channel for improved switching performance.
The forward voltage drop is 1.2 volts.
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