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Vishay SiHB22N60EF-GE3 N-Channel Power MOSFET, 19 A, 600 V, Enhancement Mode, 3-Pin TO-263 Package
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.57mm |
| Length | 10.41mm |
| Model | SIHB22N60EF-GE3 |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | SiHB22N60EF |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 19A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 182mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 179W |
| Typical Gate Charge Qg @ Vgs | 48nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- High maximum continuous drain current rating of 19 amperes.
- Drain-source voltage capability up to 600 volts.
- Low drain-source resistance of 182 milliohms to reduce conduction losses.
- Enhanced channel mode for efficient switching performance.
- Maximum power dissipation of 179 watts ensures robust thermal handling.
- Operating temperature range from -55°C to 150°C suitable for harsh environments.
- Typical gate charge of 48 nanocoulombs enables fast switching speeds.
- Designed with fast body diode to minimize switching losses.
Product Description
Vishay SIHB22N60EF-GE3 is a high-performance N-Channel Power MOSFET designed for demanding electronic applications. Featuring a maximum continuous drain current of 19 A and a drain-source voltage of 600 V, this device supports high power switching and amplification tasks. Its enhancement mode channel and low drain-source resistance of 182 milliohms minimize conduction losses, making it suitable for power-efficient designs.
The TO-263 3-pin surface mount package provides robust mechanical strength and compact form factor, ideal for server power supplies, telecom power systems, and other industrial electronics. The device can dissipate up to 179 watts and operates reliably within a wide temperature spectrum from -55°C to 150°C, accommodating harsh environments.
Additional technical traits include a typical gate charge (Qg) of 48 nC which allows rapid switching capabilities, and a fast body diode designed to reduce switching losses further. Forward voltage drop is 1.2 V, contributing to overall efficiency improvements in power conversion circuits.
This MOSFET is suited for applications such as switch mode power supplies (SMPS), power factor correction (PFC) in server and telecom equipment, and other high-performance industrial and commercial electronics requiring high voltage, current handling, and fast switching.
High drain current rating of 19 A for demanding loads. 600 V drain-source voltage for high-voltage applications. Low on-resistance and fast switching improve efficiency. Wide operating temperature range from -55°C to 150°C enhances reliability.
Compact TO-263 package for surface mount applications. Typical gate charge of 48 nC enables fast switching speeds. Explore similar power semiconductor devices and components within the Vishay range on EnvMart for your industrial, laboratory, and commercial electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current rating of the Vishay SIHB22N60EF-GE3 is 19 A.
This model has a drain-source voltage capability of up to 600 V.
The low drain-source resistance of this device is 182 milliohms, which helps reduce conduction losses.
The operating temperature range for this MOSFET is from -55°C to 150°C.
The typical gate charge for the Vishay SIHB22N60EF-GE3 is 48 nanocoulombs.
This model can dissipate a maximum power of 179 watts, ensuring robust thermal handling.
The package type of this MOSFET is TO-263, which is a 3-pin surface mount package.
The forward voltage drop for the Vishay SIHB22N60EF-GE3 is 1.2 V.
This MOSFET is suited for applications such as switch mode power supplies (SMPS) and power factor correction (PFC) in server and telecom equipment.
The height of the TO-263 package is 4.57 mm, and the width is 9.65 mm.
The maximum gate-source voltage for the Vishay SIHB22N60EF-GE3 is 30 V.
This model features an N-channel type configuration.
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