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onsemi Bipolar Power Transistor 5 A NPN 40 V dc 40 W TO-220 Single Configuration TIP31G
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 15.75mm |
| Length | 10.53mm |
| Model | TIP31G |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | TIP31G |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 40V dc |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V dc |
| Maximum Collector Base Voltage VCBO | 40V dc |
| Maximum Power Dissipation Pd | 40W |
| Maximum DC Collector Current Idc | 5A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
Key Features
- Designed for general purpose amplifier and switching applications.
- High maximum power dissipation of 40 watts enables robust operation.
- Single transistor configuration with NPN polarity guarantees reliable performance.
- Compact TO-220 AB package allows through-hole mounting installations.
- Operating temperature ranges from -65°C to 150°C for versatile environmental use.
- Minimum DC current gain of 10 and maximum transition frequency of 1 MHz suit varied signal requirements.
- Maximum collector-emitter voltage of 40 V dc and maximum collector-base voltage of 40 V dc provide effective control.
Product Description
onsemi TIP31G bipolar power transistor is engineered for use in diverse industrial and electronic amplifier and switching applications. It supports a maximum DC collector current of 5 A and a collector-emitter voltage rating of 40 V dc, ensuring dependable operation in power circuits. Its TO-220 package and through-hole mounting type facilitate practical installation on printed circuit boards.
This NPN transistor features a single transistor configuration with a minimum DC current gain (hFE) of 10 and maximum power dissipation of 40 W. It is designed to operate reliably within a temperature range from -65°C up to 150°C, complementing industrial requirements.
The device offers a collector-emitter saturation voltage VCE(sat) of 1.2 V maximum at 3 A collector current, optimized for efficient switching. Its compact form factor with dimensions of height 15.75 mm, length 10.53 mm, and width 4.83 mm aids in space-saving layouts.
The transistor sustains a maximum collector-base voltage VCBO of 40 V dc and maximum emitter-base voltage VEBO of 5 V dc, backing versatile circuit design. The maximum transition frequency of 1 MHz ensures adequacy for moderate-frequency applications.
Designed for general amplifier and switching uses. Robust 40 W power dissipation for demanding operations. Compact and reliable TO-220 package with through-hole mounting. Wide operating temperature range from -65°C to 150°C.
Supports a maximum collector current of 5 A and voltage of 40 V dc. Facilitates efficient switching with low collector-emitter saturation voltage. Single NPN transistor configuration with three pins.
Suitable for industrial, electronic manufacturing, and power circuitry applications. This transistor is made in China, assuring standard manufacturing quality. Select onsemi TIP31G for reliable discrete bipolar transistor performance in electronic design projects and production.
Explore more semiconductors and Bipolar Transistors in our Electronics & Electricals category on EnvMart for optimized component selection.
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Frequently Asked Questions
The TIP31G transistor supports a maximum DC collector current of 5 A.
This model operates reliably within a temperature range from -65°C to 150°C.
The maximum power dissipation for the TIP31G is 40 W.
The TIP31G features a through-hole mounting type, suitable for installation on printed circuit boards.
It comes in a compact TO-220 package.
The maximum collector-emitter voltage rating for the TIP31G is 40 V dc.
The minimum DC current gain (hFE) for this model is 10.
The maximum transition frequency of the TIP31G is 1 MHz.
The maximum emitter-base voltage (VEBO) for the TIP31G is 5 V dc.
The dimensions of the TIP31G are height 15.75 mm, length 10.53 mm, and width 4.83 mm.
The TIP31G has an NPN polarity configuration.
The TIP31G is manufactured in China.
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