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onsemi PNP Power Transistor, 16 A, 200 V, 3-Pin TO-204 MJ15023G

Category Power Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 20.7mm
Length 39.37mm
Model MJ15023G
Width 26.67mm
Mount Type Through Hole
Series MJ15023
Maximum Operating Temperature 200°C
Package Type TO-204
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -200V
Minimum DC Current Gain hFE 5
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 350V
Maximum Power Dissipation Pd 250W
Maximum DC Collector Current Idc -16A
Transistor Configuration Single
Maximum Transition Frequency ft 4MHz
onsemi Transistor, -16 A PNP, -250 V, 3-Pin TO-204Brand onsemi

Key Features

  • Designed for through-hole mounting and single transistor configuration.
  • Maximum power dissipation of 250 W supports high-power applications.
  • Wide operating temperature range from -65°C to 200°C ensures reliability.
  • Offers maximum collector base voltage of 350 V and emitter base voltage of 5 V.
  • Low minimum DC current gain of 5 with maximum transition frequency of 4 MHz.
  • Suitable for industrial, power electronics, and semiconductor device applications.

Product Description

onsemi MJ15023G is a robust PNP power transistor designed for demanding industrial and power electronics applications. It features a high maximum collector current rating of 16 A and can withstand collector-emitter voltages up to 200 V. The transistor comes in a durable 3-pin TO-204 package that supports through-hole mounting, ensuring sturdy mechanical and electrical connections.

This device supports a maximum power dissipation of 250 W, making it suited for high-power switching and amplification tasks. Its wide operating temperature range from -65°C to 200°C allows operation in harsh industrial environments without performance degradation.

The transistor configuration is single, with a PNP polarity providing versatility in transistor circuits requiring PNP devices. Operating parameters like maximum collector base voltage of 350 V and emitter base voltage of 5 V add reliability when used in high-voltage circuits.

Featuring a minimum DC current gain (hFE) of 5, this transistor is suitable for moderate current gain requirements, with a maximum transition frequency of 4 MHz to support medium-frequency applications.

Physical dimensions of 20.7 mm height, 39.37 mm length, and 26.67 mm width facilitate integration in standard power semiconductor layouts. Although it does not hold automotive standards or special certifications, it is fit for industrial and manufacturing usages.

Designed for through-hole mounting and single transistor configuration. Maximum power dissipation of 250 W supports high-power applications. Wide operating temperature range from -65°C to 200°C ensures reliability. Offers maximum collector base voltage of 350 V and emitter base voltage of 5 V.

Low minimum DC current gain of 5 with maximum transition frequency of 4 MHz. Dimensions include 20.7 mm height, 39.37 mm length, and 26.67 mm width for easy PCB integration. Suitable for industrial, power electronics, and semiconductor device applications.

This transistor is ideal for use in industrial automation, power supplies, motor control circuits, and electronic assembly manufacturing. onsemi’s MJ15023G provides reliable performance in robust electronic designs.

Explore high-quality Power Transistors and related electronic components in EnvMart's semiconductor category to meet diverse industrial requirements.

onsemi PNP Power Transistor, 16 A, 200 V, 3-Pin TO-204 MJ15023G
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Frequently Asked Questions

The maximum collector current rating is 16 A, making it suitable for high-current applications.

This model supports a maximum power dissipation of 250 W, allowing it to handle high-power tasks effectively.

It operates within a wide temperature range from -65°C to 200°C, ensuring reliability in various environments.

The maximum collector-emitter voltage is 200 V, which is suitable for high-voltage applications.

This model is designed for through-hole mounting, facilitating easy installation on PCBs.

The dimensions are 20.7 mm in height, 39.37 mm in length, and 26.67 mm in width, allowing for standard integration in power semiconductor layouts.

The maximum collector base voltage is 350 V, providing reliability in high-voltage circuits.

The minimum DC current gain (hFE) is 5, suitable for moderate current gain requirements in various applications.

The maximum transition frequency is 4 MHz, which supports medium-frequency applications.

This transistor is suitable for industrial automation, power supplies, motor control circuits, and electronic assembly manufacturing.

This model features a 3-pin configuration, which is standard for its package type.

The transistor has a PNP polarity, making it versatile for circuits requiring PNP devices.

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