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Nexperia 4-Element Uni-Directional ESD Protection Diode 30 W 5-Pin UMT PESD3V3L4UG,115

Category ESD Protection Diode Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1mm
Length 2.2mm
Model PESD3V3L4UG,115
Width 1.35mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type UMT
Minimum Operating Temperature -65°C
Pin Count 5
Number of Elements per Chip 4
Clamping Voltage VC 12V
Diode Configuration Common Anode
Direction Type Uni-Directional
Minimum Breakdown Voltage Vbr 5.32V
Maximum Reverse Stand-off Voltage Vwm 3.3V
Peak Pulse Power Dissipation Pppm 30W
Test Current It 1mA
Maximum Peak Pulse Current Ippm 3A
Maximum Reverse Leakage Current 300nA

Key Features

  • Uni-directional ESD protection diode with common anode diode configuration.
  • Designed for transient voltage suppression with 5.32 V minimum breakdown voltage.
  • Features a maximum reverse stand-off voltage of 3.3 V and clamping voltage of 12 V.
  • Supports a peak pulse current of 3 A and test current of 1 mA.
  • Operates in temperature range from -65°C to 150°C, suitable for rugged environments.
  • Offers low maximum reverse leakage current of 300 nA.
  • Ideal for industrial, electronic component protection, and semiconductor applications.

Product Description

Nexperia PESD3V3L4UG,115 is a 4-element uni-directional ESD protection diode designed to safeguard electronic circuits from transient voltage spikes. With a peak pulse power dissipation of 30 W and a clamping voltage of 12 V, it effectively mitigates electrostatic discharge (ESD) events, protecting sensitive semiconductor components.

This diode features a common anode configuration and is housed in a compact 5-pin UMT surface mount package, measuring only 2.2 mm in length, 1.35 mm in width, and 1 mm in height. Its robust operating temperature range from -65°C to 150°C ensures reliable performance in demanding industrial and electronic applications.

The maximum reverse stand-off voltage is 3.3 V, enabling it to block unwanted voltages while the minimum breakdown voltage is 5.32 V. The device handles a peak pulse current of 3 A and maintains a low maximum reverse leakage current of 300 nA, making it highly efficient for circuit protection.

Applications include protection of electronic components, semiconductor devices, transient voltage suppression, and ESD protection in industrial, laboratory, manufacturing, and electronic circuit design contexts.

4-element uni-directional ESD Protection Diode for semiconductor safeguarding. 30 W peak pulse power dissipation and 3 A peak pulse current handling. Compact 5-pin UMT surface mount package with minimal footprint. Operating temperature range from -65°C to 150°C for harsh environments.

Low maximum reverse leakage current improves circuit efficiency and safety. Clamping voltage of 12 V ensures effective transient voltage suppression. Common anode diode configuration for ease of integration. Suitable for industrial, electronic design, and manufacturing applications.

Explore more ESD protection solutions within our Electronics & Electricals catalog on EnvMart, and leverage Nexperia’s high-quality semiconductor components for your next project.

Nexperia 4-Element Uni-Directional ESD Protection Diode 30 W 5-Pin UMT PESD3V3L4UG,115
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Frequently Asked Questions

The peak pulse power dissipation of the Nexperia PESD3V3L4UG,115 is 30 W.

The maximum reverse stand-off voltage for this model is 3.3 V.

The clamping voltage of this diode is 12 V.

It operates within a temperature range of -65°C to 150°C.

This model features 4 elements per chip.

The maximum peak pulse current it can handle is 3 A.

The diode has a common anode configuration.

The dimensions are 2.2 mm in length, 1.35 mm in width, and 1 mm in height.

The maximum reverse leakage current is 300 nA.

The test current for this model is 1 mA.

It is suitable for protecting electronic components, semiconductor devices, and transient voltage suppression in various industrial applications.

This model is designed for surface mounting.

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