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onsemi Transistor PNP Bipolar 20 A 50 V 3-Pin TO-220 30W 2SA2210-1E

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onsemi Transistor PNP Bipolar 20 A 50 V 3-Pin TO-220 30W 2SA2210-1E

Name: onsemi Transistor PNP Bipolar 20 A 50 V 3-Pin TO-220 30W 2SA2210-1E
Brand: onsemi
SKU: 156549
Price: 1.25 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	Korea
Brand	onsemi
Height	28.85mm
Length	10.16mm
Model	2SA2210-1E
Width	4.7mm
Mount Type	Through Hole
Series	2SA2210
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-50V
Minimum DC Current Gain hFE	150
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	-6V
Maximum Collector Base Voltage VCBO	-50V
Maximum Power Dissipation Pd	30W
Maximum DC Collector Current Idc	-20A
Transistor Configuration	Single
Maximum Transition Frequency ft	1MHz

Key Features

Maximum DC collector current of 20 amperes delivering high current capacity.
Collector-emitter voltage rating of 50 volts for robust switching applications.
TO-220 package with 3 pins and through-hole mounting configuration.
Maximum power dissipation of 30 watts ensuring thermal stability.
High minimum DC current gain (hFE) of 150 for efficient amplification.
Operating temperature range from -55°C to 150°C for reliability in harsh conditions.
Designed for high-current switching with low collector to emitter saturation voltage.
Manufactured in Korea, Republic Of, ensuring quality standards.

Product Description

onsemi 2SA2210-1E is a high-performance PNP bipolar transistor rated for a maximum DC collector current of 20 A and a collector-emitter voltage of 50 V. Packaged in a durable 3-pin TO-220 form factor, this transistor is ideal for industrial and electronic applications requiring robust high-current switching capabilities.

The device operates within a broad temperature range from -55°C to 150°C, providing reliable performance in demanding environments. It features a low collector to emitter saturation voltage which enables efficient power handling and fast switching speeds with a maximum transition frequency of 1 MHz.

The 2SA2210-1E utilizes onsemi's MBIT process technology, delivering large current capacitance suited for high-speed circuits. Its generous power dissipation rating of 30 W ensures thermal stability during prolonged operation.

This transistor's through-hole TO-220 package facilitates easy mounting on printed circuit boards and heat sinks, enhancing thermal management. Maximum DC collector current is 20 amperes, enabling high load handling. Collector to emitter voltage rated at 50 volts for reliable switching.

TO-220 package type with 3 pins for conventional through-hole mounting. Rated power dissipation of 30 watts to maintain thermal performance. Minimum DC current gain (hFE) of 150, ensuring signal amplification. Operating temperature range suitable for industrial usage (-55°C to 150°C).

This transistor is ideal for industrial, automation, power supply, and signal processing applications where efficient high-current switching and durability are critical. Its high speed and low saturation voltage make it suitable for use in switching regulators, amplifiers, and motor control circuits.

Manufactured in Korea, Republic Of, this component adheres to rigorous quality and reliability standards. Explore additional onsemi bipolar transistor products and related semiconductors in EnvMart’s electronics and electricals catalog for your project requirements.

Explore more products in our Bipolar Transistors category.