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onsemi N-Channel MOSFET 200 mA 60 V Enhancement 3-Pin TO-92 2N7000-D26Z

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onsemi N-Channel MOSFET 200 mA 60 V Enhancement 3-Pin TO-92 2N7000-D26Z

Name: onsemi N-Channel MOSFET 200 mA 60 V Enhancement 3-Pin TO-92 2N7000-D26Z
Brand: onsemi
SKU: 156547
Price: 0.16 USD
Availability: InStock

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Category Discrete Semiconductor Brand onsemi Condition New

Specifications

Country of Origin	China
Brand	onsemi
Height	5.33mm
Length	5.2mm
Model	2N7000-D26Z
Width	4.19mm
Mount Type	Through Hole
Series	2N7000
Maximum Operating Temperature	150°C
Package Type	TO-92
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	200mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	9Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	400mW
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	880mV

Key Features

Employs DMOS technology for low on-state resistance and rugged performance.
Maximum power dissipation of 400 mW ensures efficient operation in low voltage systems.
Device operates reliably from -55°C to 150°C for various industrial applications.
Features a gate threshold voltage controlled up to 20 V with a forward voltage of 880 mV.
Compact design with dimensions approximately 5.33 mm height, 5.2 mm length, and 4.19 mm width.
Suitable for small signal switching and low current DC applications up to 400 mA.
Standard through-hole mounting simplifies PCB integration.
Ideal for use in small servo motor control and MOSFET gate driving circuits.

Product Description

onsemi 2N7000-D26Z is an N-channel MOSFET transistor housed in a 3-pin TO-92 package, designed with proprietary high cell density DMOS technology to minimize on-state resistance and ensure reliable, fast switching capabilities. This component supports a maximum continuous drain current of 200 mA with a maximum drain-source voltage of 60 V, making it well-suited for low-voltage, low-current applications.

The device offers a maximum power dissipation of 400 mW and operates efficiently over a wide temperature range from -55°C to 150°C. It is controlled by gate-source voltage up to 20 V and a forward voltage of 880 mV, suitable for switching in industrial electronics and power management circuits. The compact TO-92 package measures approximately 5.33 mm in height, 5.2 mm in length, and 4.19 mm in width, supporting through-hole mounting for straightforward printed circuit board integration.

Applications for this MOSFET include small signal switching, power MOSFET gate drivers, and low current DC motor controls such as small servo motors in industrial automation. The product is manufactured in China and adheres to onsemi’s rigorous quality standards, although it does not have additional specific certifications.

Employs high-density DMOS structure for low RDS(on) and reliable operation. Maximum continuous drain current is 200 mA, with pulsed currents up to 2 A. Wide operating temperature range from -55°C to 150°C for robust performance.

Low forward voltage and maximum gate-source voltage of 20 V enhance switching performance. Compact TO-92 package with 3 pins for ease of mounting and circuit design. Ideal for various low-voltage electronic circuits and small motor driver applications.

This onsemi 2N7000-D26Z MOSFET is an essential discrete semiconductor for designers and engineers in industrial, electronic components, and power management applications. It combines efficient switching, compact size, and dependable performance for diverse low-power electronic systems.

Explore a wide range of Discrete Semiconductors and MOSFETs with high-quality technical specifications on EnvMart for your electronics design and production needs.