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onsemi N-Channel MOSFET, 260 mA, 60 V Enhancement, 3-Pin SOT-23 Package NTR5103NT1G

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onsemi N-Channel MOSFET, 260 mA, 60 V Enhancement, 3-Pin SOT-23 Package NTR5103NT1G

Name: onsemi N-Channel MOSFET, 260 mA, 60 V Enhancement, 3-Pin SOT-23 Package NTR5103NT1G
Brand: onsemi
SKU: 156416
Price: 0.04 USD
Availability: InStock

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Category Discrete Semiconductor Brand onsemi Condition New

Specifications

Country of Origin	China
Brand	onsemi
Height	1.01mm
Length	3.04mm
Model	NTR5103NT1G
Width	1.4mm
Mount Type	Surface
Series	NTR5103N
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	260mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	3Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	300mW
Typical Gate Charge Qg @ Vgs	0.81nC
Maximum Gate Source Voltage Vgs	30V
Forward Voltage Vf	1.2V
Small Signal MOSFET	60 V, 310 mA, Single, N−Channel, SOT−23

Key Features

Features low drain-source resistance of 3 ohms to improve efficiency.
Maximum power dissipation is 300 mW ensuring reliable performance.
Operational temperature ranges from -55°C to 150°C for diverse environments.
Compact SOT-23 surface mount package suitable for space-constrained designs.
Typical gate charge is 0.81 nC at gate-source voltage ensuring low switching loss.
Maximum gate-source voltage rating of 30 V supports robust gate control.
Forward voltage is rated at 1.2 V for efficient conduction.
Ideal for low side load switches, level shift circuits, and DC-DC converters.

Product Description

The onsemi NTR5103NT1G is a high-performance N-Channel MOSFET designed for applications requiring low current and voltage ratings with efficient switching capabilities. It supports a maximum continuous drain current of 260 mA and can withstand a drain-source voltage up to 60 V.

Encased in a compact 3-pin SOT-23 surface mount package, this device is suitable for space-limited and surface mount technology (SMT) assembly lines. The low drain-source resistance of 3 ohms improves overall efficiency in power management circuits.

Engineered for operation in a wide temperature range from -55°C to 150°C, this MOSFET can reliably function in challenging industrial and commercial environments. Its specifications include a typical gate charge of 0.81 nC at specified gate-source voltage, enabling fast switching and reduced power loss.

Applications for the NTR5103NT1G include low side load switching, level shifting circuits, and DC-DC conversion tasks, making it compatible with electronic components and power connectors in semiconductor solutions.

Manufactured in China, it adheres to industry standards but does not hold specific automotive or other certifications. Features low drain-source resistance of 3 ohms to improve efficiency. Maximum power dissipation is 300 mW ensuring reliable performance.

Operational temperature ranges from -55°C to 150°C for diverse environments. Compact SOT-23 surface mount package suitable for space-constrained designs. Typical gate charge is 0.81 nC at gate-source voltage ensuring low switching loss.

Maximum gate-source voltage rating of 30 V supports robust gate control. Forward voltage is rated at 1.2 V for efficient conduction. Ideal for low side load switches, level shift circuits, and DC-DC converters. Manufactured in China with small signal MOSFET specifications.

Explore onsemi among other semiconductor devices and MOSFET components at EnvMart for your electronic design needs.

Explore more products in our Discrete Semiconductor category.