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Vishay Single E N-Channel MOSFET, 47 A, 650 V, 417 W Power Dissipation, TO-247AC Package SIHG47N65E-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Model | SIHG47N65E-GE3 |
| Series | E |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247AC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| ANSI/ESD S20.20 | 2014 |
| BS EN 61340-5-1 | 2007 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 47A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 0.072Ω |
| Maximum Power Dissipation Pd | 417W |
| Typical Gate Charge Qg @ Vgs | 273nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
| Transistor Configuration | Single |
Key Features
- Operates efficiently with a maximum power dissipation of 417 W.
- Features a low drain-source resistance of 0.072 ohms at 10 V gate-source voltage.
- Supports a maximum gate-source voltage of 30 V and a typical gate charge of 273 nC.
- Wide operating temperature range from -55°C to 150°C ensures reliability in harsh environments.
- Equipped with a forward voltage drop of 1.2 V for reduced conduction losses.
- Package type TO-247AC provides robust thermal performance for power applications.
- Optimized to reduce switching and conduction losses, enhancing overall efficiency.
- Complies with RoHS standards for environmental safety.
Product Description
Vishay SIHG47N65E-GE3 is a high-performance Single E N-Channel MOSFET specially engineered for industrial power management and switching applications. This device supports a continuous drain current of 47 A and a high drain-source voltage of 650 V, making it suitable for demanding applications such as battery chargers, motor drives, renewable energy inverters, and switch mode power supplies (SMPS).
Featuring a low on-resistance (Rds(on)) of 0.072 ohms at a 10 V gate drive and a typical gate charge of 273 nC, it ensures reduced switching and conduction losses, which leads to improved energy efficiency and thermal management. The maximum power dissipation rating of 417 W, combined with a TO-247AC package, allows effective heat dissipation in power circuits.
This MOSFET operates reliably over a wide temperature range of -55°C to 150°C, providing durable performance in industrial, automotive, and telecom environments. Its gate-source voltage withstands up to 30 V, and it features a forward voltage of 1.2 V, contributing to low conduction losses.
Applications for this Vishay MOSFET include battery chargers, fluorescent ballasts, high-intensity discharge lighting, power factor correction supplies, solar PV inverters, server power supplies, and motor drives. Its robust design supports long operational life without compromising efficiency.
High continuous drain current of 47 A for robust power handling. Maximum drain-source voltage of 650 V for high voltage applications. Low on-resistance to minimize conduction losses. Wide operating temperature range from -55°C to 150°C.
Optimized gate charge for efficient switching performance. TO-247AC package for excellent thermal dissipation. RoHS compliant for eco-friendly manufacturing.
Choose Vishay SIHG47N65E-GE3 MOSFET for integrated power management solutions in industrial, commercial, and renewable energy systems. Explore similar semiconductor devices and power components in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the Vishay SIHG47N65E-GE3 is 47 A.
It has a maximum drain-source voltage of 650 V.
The maximum power dissipation rating is 417 W.
The on-resistance (Rds(on)) at a 10 V gate drive is 0.072 ohms.
The typical gate charge is 273 nC.
It operates over a wide temperature range from -55°C to 150°C.
This model comes in a TO-247AC package type.
The maximum gate-source voltage supported is 30 V.
It is suitable for applications such as battery chargers, motor drives, and renewable energy inverters.
The forward voltage drop is 1.2 V.
Yes, it complies with RoHS standards for environmental safety.
This MOSFET features an N-channel configuration.
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