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Vishay P-Channel Power MOSFET 30V Drain-Source, 60V Gate-Source Voltage, 10mΩ Rds(on), 35.7W Power SI7143DP-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Model | SI7143DP-T1-GE3 |
| Standards/Approvals | RoHS |
| Maximum Gate Source Voltage Vgs | 60V |
Key Features
- Features a maximum drain-source voltage of 30V for robust power handling.
- Maximum gate-source voltage rating of 60V ensures safe and reliable operation.
- Has a low drain-source resistance of 10 milliohms at 10V gate-source voltage.
- Supports a maximum power dissipation of 35.7 watts for thermal stability.
- Encased in a compact PowerPAK-SO-8 package with a low 1.07mm profile.
- Operates efficiently across a temperature range from -55°C to +150°C.
- Halogen and lead-free design complying with RoHS directives.
- Optimized for switching and conduction efficiency in various electronic applications.
Product Description
Vishay SI7143DP-T1-GE3 is a P-channel Power MOSFET featuring a 30V drain-source voltage and 60V maximum gate-source voltage rating. This device is housed in a low height (1.07mm) PowerPAK-SO-8 package, which offers low thermal resistance and compact sizing.
The transistor is optimized for reduced switching and conduction losses, enabling excellent energy efficiency and extended device lifetime. It has a typical drain-source on-resistance of 10 milliohms measured at a 10V gate voltage, ensuring minimal power loss during operation.
Rated for a maximum power dissipation of 35.7 watts, it supports a wide operating temperature range from -55°C to 150°C, making it suitable for demanding industrial, power management, and electronic systems.
This component incorporates lead-free and halogen-free materials, conforming to RoHS environmental standards, suitable for environmentally conscious electronic designs. Typical applications include adaptor circuits, load switching in portable computers such as notebook PCs, and other electronic power management solutions.
Maximum drain-source voltage: 30V. Maximum gate-source voltage: 60V. Drain-source resistance: 10mΩ at Vgs=10V. Maximum power dissipation: 35.7W. PowerPAK-SO-8 package with 1.07mm height. Operating temperature -55°C to 150°C.
RoHS compliant and halogen-free. Designed for low switching and conduction losses.
This Vishay Power MOSFET is ideal for high-efficiency power switching in industrial, commercial, and computing applications. Explore more Power MOSFETs in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum drain-source voltage for this model is 30V.
This MOSFET has a maximum gate-source voltage rating of 60V.
The typical drain-source on-resistance is 10 milliohms at a 10V gate-source voltage.
The maximum power dissipation for this unit is 35.7 watts.
It operates efficiently across a temperature range from -55°C to 150°C.
This model is housed in a PowerPAK-SO-8 package with a low height of 1.07mm.
Yes, this MOSFET is RoHS compliant and incorporates halogen-free materials.
It is optimized for switching and conduction efficiency in various electronic applications, including adaptor circuits and load switching in portable computers.
The component is designed with lead-free and halogen-free materials, suitable for environmentally conscious electronic designs.
Key features include low drain-source resistance, high power dissipation capability, and a compact package design for thermal stability.
The country of origin for this MOSFET is China.
The low on-resistance of 10 milliohms ensures minimal power loss during operation, enhancing energy efficiency.
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