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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 3.05mm |
| Model | ZVP3306FTA |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 90mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 14Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 330mW |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
DiodesZetex ZVP3306FTA is a Type P-Channel MOSFET designed for efficient switching operations in electronic circuits. It features a maximum continuous drain current of 90mA and can withstand a maximum drain-source voltage of 60V. The device operates in enhancement mode and is housed in a compact 3-pin SOT-23 surface mount package, making it suitable for compact and high-density electronic designs.
This MOSFET supports a maximum power dissipation of 330mW, allowing it to handle moderate power applications efficiently. It exhibits a low maximum drain-source resistance of 14 ohms, which contributes to better switching performance and reduced power loss.
With an operating temperature range stretching from -55°C to 150°C, the ZVP3306FTA ensures reliable operation even under harsh industrial and automotive environments. It conforms to the stringent AEC-Q101 automotive standard, signifying its suitability in automotive circuits requiring dependable semiconductor performance.
The device’s physical dimensions are compact with a length of 3.05mm, width of 1.4mm, and height of 1mm, allowing integration into space-constrained PCB layouts. Its gate can tolerate voltage swings of up to ±20V, providing robustness against voltage transients. The forward voltage drop of -1.2V ensures minimal conduction losses in switching applications.
This P-Channel MOSFET is ideal for use in industrial, automotive, and electronic manufacturing applications, including power management, signal switching, and protection circuits. This device operates in enhancement mode, ideal for low-power switching applications.
It supports a maximum power dissipation of 330mW, suitable for moderate thermal environments. The transistor has a low maximum drain-source resistance of 14 ohms, enhancing efficiency. Wide operating temperature range from -55°C to 150°C ensures reliability in harsh conditions.
Designed conforming to AEC-Q101 automotive standard, ensuring high quality and robustness. Compact dimensions: length 3.05mm, width 1.4mm, height 1mm, facilitating dense PCB layouts. Maximum gate-source voltage rating is ±20V, providing protection against voltage spikes.
Forward voltage drop is -1.2V, indicating low conduction losses. Explore more semiconductor and MOSFET products from DiodesZetex in the Electronics & Electricals category at EnvMart.
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