DiodesZetex N-Channel Enhancement MOSFET 710 mA, 60 V, 4-Pin SOT-223 ZVN2106GTA

DiodesZetex ZVN2106GTA is a high-quality N-Channel Enhancement Mode MOSFET designed for efficient switching and amplification in various electronic applications. Operating with a maximum continuous drain current of 710 mA and maximum drain-source voltage of 60 V, it is ideal for low power circuits requiring compact packages and reliable performance.

The MOSFET comes in a 4-pin SOT-223 surface mount package which simplifies PCB assembly processes and ensures stable mechanical installation. With a maximum power dissipation of 2 W, it suits usages in power management, signal switching, and voltage regulation circuits within automotive, industrial, and consumer electronics.

Operating safely within -55°C to 150°C, this device conforms to key automotive standards including AEC-Q101, AEC-Q200, and AEC-Q100, providing assured quality and durability under harsh conditions. Its low maximum drain-source resistance of 2 ohms contributes to lower conduction losses and improved efficiency.

The gate-source voltage range of ±20 V protects the gate against electrical overstress, while the forward voltage of 1.2 V ensures a minimal voltage drop across the device in conduction mode, resulting in optimized circuit performance.

Compact dimensions of 6.7 mm length, 3.7 mm width, and 1.65 mm height facilitate versatile integration into tight spaces on circuit boards. The ZVN2106GTA MOSFET is widely used in industries such as electronics manufacturing, automotive electronics, laboratory prototyping, and consumer electronic devices.

The MOSFET has a 4-pin SOT-223 surface mount package for easy integration. It supports a maximum power dissipation of 2 W suitable for low-power applications. Operating temperature range is from -55°C to 150°C ensuring reliability.

Maximum drain-source resistance is 2 ohms, optimizing conduction efficiency. This device includes automotive standards AEC-Q101, AEC-Q200, and AEC-Q100 compliance. Forward voltage is rated at 1.2 V for minimal voltage drop.

Maximum gate-source voltage tolerance is ±20 V to protect the gate. The compact package dimensions are 6.7 mm length, 3.7 mm width, and 1.65 mm height.

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