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onsemi FCP N-Channel MOSFET, 44 A, 650 V Enhancement, TO-220 Package, 3-Pin FCP067N65S3
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 16.3mm |
| Length | 10.67mm |
| Model | FCP067N65S3 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | FCP |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 44A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 67mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 312W |
| Typical Gate Charge Qg @ Vgs | 78nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
| Internal Gate Resistance | 7.0 ohm |
Key Features
- Enhancement mode device designed for efficient switching performance.
- Maximum continuous drain current of 44 amperes ensures high current capacity.
- Maximum drain-source voltage of 650 volts for high voltage applications.
- Maximum power dissipation of 312 watts allows effective heat handling.
- Typical gate charge of 78 nanocoulombs improves switching speed and reduces losses.
- Operating temperature range from -55°C to 150°C supports a wide range of environments.
- Package type is TO-220, suitable for through-hole mounting.
- Internal gate resistance of 7.0 ohms contributes to controlled switching characteristics.
Product Description
onsemi FCP067N65S3 is a high-performance N-Channel MOSFET designed for efficient power management in industrial and electronic applications. This device features an enhancement mode channel suitable for high voltage and high current switching tasks.
The MOSFET supports a maximum continuous drain current of 44 A and a maximum drain-source voltage rating of 650 V, making it ideal for power conversion, motor control, and other demanding semiconductor use cases. It is housed in a 3-pin TO-220 package compatible with through-hole mounting on printed circuit boards.
Key electrical characteristics include a low typical gate charge of 78 nC at a gate-source voltage of 7 V, allowing for lower switching losses and improved efficiency. The device operates reliably over a broad temperature range from -55°C to 150°C, suitable for various industrial environments.
onsemi's SuperFET® III technology provides advanced charge balance benefits, reducing conduction losses and enhancing switch performance. The built-in internal gate resistance of 7.0 ohms helps to moderate switching speed and minimize voltage oscillations.
Physical dimensions are 16.3 mm in height, 4.7 mm in width, and 10.67 mm in length, enabling compact PCB layouts. The MOSFET supports a maximum power dissipation of 312 W, ensuring robust thermal management.
This N-Channel MOSFET is used extensively in industrial controls, consumer electronics, automotive electronics (although this model is not automotive standard certified), telecom systems, and power supply designs requiring reliable, high performance switching components.
Enhancement mode ensures excellent switching characteristics. High current and voltage ratings cater to demanding power applications. SuperFET III technology improves efficiency through low gate charge. Robust thermal and operating temperature range guarantees device stability.
Compact TO-220 packaging facilitates easy integration on PCBs.
onsemi MOSFETs are widely used in electronic component assemblies and power semiconductor systems available at EnvMart. Explore our semiconductor range for compatible devices from onsemi and other top manufacturers.
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Frequently Asked Questions
The maximum continuous drain current of this model is 44 A, making it suitable for high current applications.
It has a maximum drain-source voltage rating of 650 V, which is ideal for high voltage applications.
The typical gate charge is 78 nanocoulombs at a gate-source voltage of 7 V, which helps improve switching speed and reduce losses.
This model operates over a temperature range from -55°C to 150°C, allowing it to function in various environments.
It is housed in a TO-220 package, which is suitable for through-hole mounting on printed circuit boards.
The maximum power dissipation is 312 watts, enabling effective heat handling during operation.
The dimensions are 16.3 mm in height, 4.7 mm in width, and 10.67 mm in length, allowing for compact PCB layouts.
The internal gate resistance is 7.0 ohms, which contributes to controlled switching characteristics.
This device is an N-channel MOSFET, designed for enhancement mode operation.
The maximum gate-source voltage for this model is 30 V, which is important for ensuring proper operation.
This model belongs to the FCP series, which is known for efficient power management applications.
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