Nexperia N-Channel MOSFET 335 mA 55 V Enhancement Mode 3-Pin SOT-23 Surface-Mount BSH111BKR

Nexperia BSH111BKR is a high-performance N-channel enhancement mode MOSFET designed for space- and power-critical applications. Packaged in a compact 3-pin SOT-23 surface-mount device, it features trench MOSFET technology that delivers very fast switching speeds and a class-leading safe operating area (SOA).

This MOSFET supports a maximum continuous drain current of 335 mA and can withstand drain-source voltages up to 55 V. Its low on-resistance of 8.1 Ω ensures efficient power dissipation, which is rated at a maximum of 1.45 W. The device operates reliably in extreme conditions with a temperature range of -55°C to 150°C, making it suitable for demanding industrial and commercial electronics applications.

The gate-source voltage rating is up to 10 V with a typical gate charge of only 0.5 nC, enabling low gate drive power consumption and high-speed switching performance. Electrostatic discharge protection exceeds 3 kV human body model (HBM) thresholds, protecting circuits from unexpected surges.

This MOSFET is commonly used in relay drivers, high-speed line drivers, low-side switches, and general switching circuits within industrial, consumer electronics, automotive, and telecommunications equipment.

Maximum Continuous Drain Current: 335 mA. Maximum Drain-Source Voltage: 55 V. Low Rds(on) of 8.1 Ω for efficient operation. Trench MOSFET technology for fast switching. Compact SOT-23 surface-mount package. Operating temperature range from -55°C to 150°C.

ESD protection greater than 3 kV HBM. Gate charge typical value at 0.5 nC. Maximum gate-source voltage of 10 V. Manufactured with quality assurance in China.

This product is part of the Nexperia portfolio, known for reliability and robust electronic components. Explore EnvMart’s extensive semiconductor category for complementary electronic components and MOSFET types optimized for your industrial or laboratory requirements.